Silicon Carbide (SiC) MOSFET – 12 mohm, 650 V, M2, D2PAK-7L

Features • Typ. RDS(on) = 12 m @ VGS = 18 V Typ. RDS(on) = 15 m @ VGS = 15 V • Ultra Low Gate Charge (QG(tot) = 283 nC) • Low Effective Output Capacitance (Coss = 424 pF) • 100% Avalanche Tested • AEC−Q101 Qualified and PPAP Capable • This Device is Halide Free and RoHS Compliant with

文件：331.48 Kbytes 页数：8 Pages

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安森美半导体

Silicon Carbide (SiC) MOSFET - 44mohm, 650V, M2, D2PAK-7L

Features • Typ. RDS(on) = 44 m @ VGS = 18 V Typ. RDS(on) = 60 m @ VGS = 15 V • Ultra Low Gate Charge (QG(tot) = 74 nC) • Low Output Capacitance (Coss = 133 pF) • 100% Avalanche Tested • TJ = 175°C • RoHS Compliant Typical Applications • SMPS (Switching Mode Power Supplies) • Solar

文件：314.65 Kbytes 页数：8 Pages

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安森美半导体

Silicon Carbide (SiC) MOSFET – EliteSiC, 12mohm, 650V, M2, D2PAK-7L

Features • Typ. RDS(on) = 12 m @ VGS = 18 V Typ. RDS(on) = 15 m @ VGS = 15 V • Ultra Low Gate Charge (QG(tot) = 283 nC) • Low Effective Output Capacitance (Coss = 424 pF) • 100% Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2

文件：329.52 Kbytes 页数：8 Pages

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安森美半导体

Silicon Carbide (SiC) MOSFET – EliteSiC, 20mohm, 1200V, M1, D2PAK-7L

Features • Typ. RDS(on) = 20 m • Ultra Low Gate Charge (QG(tot) = 220 nC) • High Speed Switching with Low Capacitance (Coss = 258 pF) • 100% Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection)

文件：346.77 Kbytes 页数：7 Pages

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安森美半导体

Silicon Carbide (SiC) MOSFET - EliteSiC, 32 mohm, 650 V, M3S, D2PAK-7L

Features • Typical RDS(ON) = 32 m @ VGS = 18 V • Ultra Low Gate Charge (QG(tot) = 55 nC) • High Speed Switching with Low Capacitance (Coss = 113 pF) • 100% Avalanche Tested • This Device is Halide Free and RoHS Compliant with Exemption 7a, Pb−Free 2LI (on Second Level Interconnection)

文件：468.1 Kbytes 页数：9 Pages

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安森美半导体

Silicon Carbide (SiC) MOSFET - EliteSiC, 32 mohm, 650 V, M3S, D2PAK-7L

Features • Typical RDS(ON) = 32 m @ VGS = 18 V • Ultra Low Gate Charge (QG(tot) = 55 nC) • High Speed Switching with Low Capacitance (Coss = 113 pF) • 100% Avalanche Tested • AEC−Q101 Qualified and PPAP Capable • This Device is Halide Free and RoHS Compliant with Exemption 7a, Pb−Free

文件：470.52 Kbytes 页数：9 Pages

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安森美半导体

Silicon Carbide SiC MOSFET - 31 mohm, 650V,M2, D2PAK-71

Features • Typ. RDS(on) = 31 m @ VGS = 18 V Typ. RDS(on) = 45 m @ VGS = 15 V • Ultra Low Gate Charge (QG(tot) = 105 nC) • Low Effective Output Capacitance (Coss = 168 pF) • 100% Avalanche Tested • AEC−Q101 Qualified and PPAP Capable • This Device is Halide Free and RoHS Compliant with

文件：298.27 Kbytes 页数：8 Pages

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安森美半导体

Silicon Carbide (SiC) MOSFET – 22mohm, 1200V, M3, D2PAK-7L

Features • Typ. RDS(on) = 22 m • Low switching losses (Typ. EON 485 J at 40 A, 800 V) • 100% Avalanche Tested • These Devices are RoHS Compliant Typical Applications • Solar Inverters • Electric Vehicle Charging Stations • Uninterruptible Power Supplies (UPS) • Energy Storage Syst

文件：326.59 Kbytes 页数：9 Pages

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安森美半导体

Silicon Carbide (SiC) MOSFET – EliteSiC, 40mohm, 1200V, M1, D2PAK-7

Features • Typ. RDS(on) = 40 m • Ultra Low Gate Charge (Typ. QG(tot) = 106 nC) • Low Effective Output Capacitance (Typ. Coss = 139 pF) • 100% Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection)

文件：330.93 Kbytes 页数：8 Pages

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安森美半导体

Silicon Carbide (SiC) MOSFET – 12 mohm, 650V, M2, D2PAK-7L

Features • Typ. RDS(on) = 12 m @ VGS = 18 V Typ. RDS(on) = 15 m @ VGS = 15 V • Ultra Low Gate Charge (QG(tot) = 283 nC) • Low Effective Output Capacitance (Coss = 424 pF) • 100% Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2

文件：303.61 Kbytes 页数：8 Pages

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安森美半导体