98AON84234G中文资料安森美半导体数据手册PDF规格书

Features

 Typical RDS(ON) = 23 m @ VGS = 18 V

 Ultra Low Gate Charge (QG(tot) = 69 nC)

 High Speed Switching with Low Capacitance (Coss = 153 pF)

 100% Avalanche Tested

 This Device is Halide Free and RoHS Compliant with Exemption 7a,

Pb−Free 2LI (on Second Level Interconnection)

Applications

 SMPS, Solar Inverters, UPS, Energy Storages,

EV Charging Infrastructure