98AON83292G中文资料安森美半导体数据手册PDF规格书

Features

• Typ RDS(on) = 52.5 m at VGS = −4.5 V, ID = −4 A

• Typ RDS(on) = 75.3 m at VGS = −2.5 V, ID = −3.2 A

• Fast Switching Speed

• Low Gate Charge (6.9 nC Typical)

• High Performance Trench Technology for Extremely Low RDS(on)

• SUPERSOT−6 Package: Small Footprint (72% Smaller than

Standard SO−8); Low Profile (1 mm Thick)

• AEC−Q101 Qualified and PPAP Capable

• This Device is Pb−Free and is RoHS Compliant

Applications

• Load Switch

• Battery Protection

• Power management