PNP General-Purpose Amplifier

Features • This Device Has Matched Dies • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

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NPN General-Purpose Amplifier

Features • This Device Has Matched Dies • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

文件：294.37 Kbytes 页数：5 Pages

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MOSFET ??P-Channel, POWERTRENCH -20 V, -4 A, 100 m

Features • Typ RDS(on) = 52.5 m at VGS = −4.5 V, ID = −4 A • Typ RDS(on) = 75.3 m at VGS = −2.5 V, ID = −3.2 A • Fast Switching Speed • Low Gate Charge (6.9 nC Typical) • High Performance Trench Technology for Extremely Low RDS(on) • SUPERSOT−6 Package: Small Footprint (72% Smaller th

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Field Effect Transistor - Dual, N & P-Channel, Enhancement Mode

文件：363.11 Kbytes 页数：10 Pages

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Field Effect Transistor - Dual, N-Channel, Enhancement Mode

文件：335.81 Kbytes 页数：7 Pages

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MOSFET - Dual P-Channel, POWERTRENCH

文件：285.28 Kbytes 页数：6 Pages

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