CEM9435

P-ChannelEnhancementModeMOSFET

FEATURES ■-30V,-5.3A,RDS(ON)=50mΩ@VGS=-10V. ​​​​​​​RDS(ON)=90mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■SurfacemountPackage. ■Leadfreeproductisacquired.

CEM9435A

P-ChannelEnhancementModeMOSFET

FEATURES ■-30V,-5.3A,RDS(ON)=50mΩ@VGS=-10V. ​​​​​​​RDS(ON)=90mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■SurfacemountPackage. ■Leadfreeproductisacquired.

CET9435A

P-ChannelEnhancementModeMOSFET

CET9435A

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -30V,-5.3A,RDS(ON)=60mW@VGS=-10V. RDS(ON)=120mW@VGS=-4.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-223package. Lead-freeplating;RoHScompliant.

CHM9435AJPT

P-ChannelEnhancementModeFieldEffectTransistor

CHM9435AZPT

P-ChannelEnhancementModeFieldEffectTransistor

CJQ9435

P-ChannelPowerMOSFET

CJQ9435

P-ChannelMOSFETusesadvancedtrenchtechnology

CJQ9435

Plastic-EncapsulateMOSFETS

CMT9435G

P-CHANNELENHANCEMENTMODEMOSFET

CRIO-9435

CompactRIODigitalInputandCounter/TimerModules

DMJT9435

LOWVCE(SAT)PNPSURFACEMOUNTTRANSISTOR

Features •IdeallySuitedforAutomatedAssemblyProcesses •LowCollector-EmitterSaturationVoltage •IdealforMediumPowerSwitchingorAmplificationApplications •LeadFreeByDesign/RoHSCompliant(Note1) •GreenDevice(Note2)

DTM9435

P-ChannelMOSFETusesadvancedtrenchtechnology

DTM9435

P-Channel30-V(D-S)MOSFETHalogen-free

DTM9435

P-Channel30-V(D-S)MOSFET

FDS9435A

SingleP-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription ThisP-ChannelMOSFETisaruggedgateversionofFairchildSemiconductor’sadvancedPowerTrenchprocess.Ithasbeenoptimizedforpowermanagementapplicationsrequiringawiderangeofgavedrivevoltageratings(4.5V–25V). Features ·–5.3A,–30VRDS(ON)=50

FDS9435A-NL

P-Channel30-V(D-S)MOSFET

FDS9435-NL

P-Channel30-V(D-S)MOSFET

FTK9435

HighPowerandcurrenthandingcapability

GAPM9435

MinisizeofDiscretesemiconductorelements