丝印：860N；Package：WDFN8；MOSFET - Power, Single N-Channel 80 V, 21.1 m, 33 A

Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • NVTFS6H860NWF − Wettable Flanks Product • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：210.22 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：8601；Package：PS-13；Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

丝印：8602；Package：PS-15；Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

丝印：8603；Package：PS-14；Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

丝印：8605；Package：PS-8；Bipolar Transistors Silicon PNP Epitaxial Type

Applications • High-Speed Switching • DC-DC Converters Features (1) High DC current gain: hFE = 200 to 500 (VCE = -2 V, IC = -0.5 A) (2) Low collector-emitter saturation voltage: VCE(sat) = -0.27 V (max) (IC = -1.6 A, IB = -53 mA) (3) High-speed switching: tf = 60 ns (typ.) (IC = -1.6 A)

文件：345.79 Kbytes 页数：7 Pages

TOSHIBA

东芝

丝印：8606；Package：PS-8；Bipolar Transistors Silicon PNP Epitaxial Type

Applications • High-Speed Switching • DC-DC Converters Features (1) High DC current gain: hFE = 100 to 200 (VCE = -2 V, IC = -0.4 A) (2) Low collector-emitter saturation voltage: VCE(sat) = -0.22 V (max) (IC = -1.2 A, IB = -0.12 A) (3) High-speed switching: tf = 35 ns (typ.) (IC = -1.2 A)

文件：306.64 Kbytes 页数：7 Pages

TOSHIBA

东芝

丝印：8607；Package：PS-8；Bipolar Transistors Silicon PNP Epitaxial Type

Applications • High-Speed Switching • DC-DC Converters Features (1) High DC current gain: hFE = 120 to 240 (VCE = -2 V, IC = -0.25 A) (2) Low collector-emitter saturation voltage: VCE(sat) = -0.32 V (max) (IC = -0.75 A, IB = -75 mA) (3) High-speed switching: tf = 65 ns (typ.) (IC = -0.75 A

文件：310 Kbytes 页数：7 Pages

TOSHIBA

东芝

丝印：8600；Package：PMPAK5x6L；N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：80.31 Kbytes 页数：6 Pages

A-POWER

富鼎先进电子

丝印：8600；Package：TO-220；N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：114.29 Kbytes 页数：6 Pages

A-POWER

富鼎先进电子

丝印：8604C；Package：PDFN5x6；N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：75.77 Kbytes 页数：6 Pages

A-POWER

富鼎先进电子