丝印：83325L；Package：PICOSTAR；CSD83325L 12-V Dual N-Channel NexFET™ Power MOSFET

1 Features • Common drain configuration • Low-on resistance • Small footprint of 2.2 mm × 1.15 mm • Lead free • RoHS compliant • Halogen free • Gate ESD protection 2 Applications • Battery management • Battery protection 3 Description This 12-V, 9.9-mΩ, 2.2-mm × 1.15-mm LGA Dual N

文件：1.14575 Mbytes 页数：14 Pages

TI

德州仪器

丝印：83325L；Package：PICOSTAR；CSD83325L 12-V Dual N-Channel NexFET™ Power MOSFET

1 Features • Common drain configuration • Low-on resistance • Small footprint of 2.2 mm × 1.15 mm • Lead free • RoHS compliant • Halogen free • Gate ESD protection 2 Applications • Battery management • Battery protection 3 Description This 12-V, 9.9-mΩ, 2.2-mm × 1.15-mm LGA Dual N

文件：1.14575 Mbytes 页数：14 Pages

TI

德州仪器

丝印：83325L；Package：PICOSTAR；CSD83325L 12-V Dual N-Channel NexFET™ Power MOSFET

1 Features • Common drain configuration • Low-on resistance • Small footprint of 2.2 mm × 1.15 mm • Lead free • RoHS compliant • Halogen free • Gate ESD protection 2 Applications • Battery management • Battery protection 3 Description This 12-V, 9.9-mΩ, 2.2-mm × 1.15-mm LGA Dual N

文件：1.14575 Mbytes 页数：14 Pages

TI

德州仪器

丝印：83325L；Package：PICOSTAR；CSD83325L 12-V Dual N-Channel NexFET™ Power MOSFET

1 Features • Common drain configuration • Low-on resistance • Small footprint of 2.2 mm × 1.15 mm • Lead free • RoHS compliant • Halogen free • Gate ESD protection 2 Applications • Battery management • Battery protection 3 Description This 12-V, 9.9-mΩ, 2.2-mm × 1.15-mm LGA Dual N

文件：1.14575 Mbytes 页数：14 Pages

TI

德州仪器