丝印：8351；Package：WQFN；ADC08351 8-Bit, 42 MSPS, 40 mW A/D Converter

1FEATURES 2• Low Input Capacitance • Internal Sample-and-Hold Function • Single +3V Operation • Power Down Feature • TRI-STATE Outputs KEY SPECIFICATIONS • Resolution: 8 Bits • Maximum Sampling Frequency: 42MSPS (min) • ENOB @ fCLK = 42 MHz, f IN = 4.4 MHz: 7.2 Bits (typ) • Ensured No

文件：1.1542 Mbytes 页数：26 Pages

TI

德州仪器

丝印：8351；Package：WQFN；ADC08351 8-Bit, 42 MSPS, 40 mW A/D Converter

1FEATURES 2• Low Input Capacitance • Internal Sample-and-Hold Function • Single +3V Operation • Power Down Feature • TRI-STATE Outputs KEY SPECIFICATIONS • Resolution: 8 Bits • Maximum Sampling Frequency: 42MSPS (min) • ENOB @ fCLK = 42 MHz, f IN = 4.4 MHz: 7.2 Bits (typ) • Ensured No

文件：1.1542 Mbytes 页数：26 Pages

TI

德州仪器

丝印：8351；Package：WQFN；ADC08351 8-Bit, 42 MSPS, 40 mW A/D Converter

1FEATURES 2• Low Input Capacitance • Internal Sample-and-Hold Function • Single +3V Operation • Power Down Feature • TRI-STATE Outputs KEY SPECIFICATIONS • Resolution: 8 Bits • Maximum Sampling Frequency: 42MSPS (min) • ENOB @ fCLK = 42 MHz, f IN = 4.4 MHz: 7.2 Bits (typ) • Ensured No

文件：1.1542 Mbytes 页数：26 Pages

TI

德州仪器

丝印：8351；Package：WQFN；ADC08351 8-Bit, 42 MSPS, 40 mW A/D Converter

1FEATURES 2• Low Input Capacitance • Internal Sample-and-Hold Function • Single +3V Operation • Power Down Feature • TRI-STATE Outputs KEY SPECIFICATIONS • Resolution: 8 Bits • Maximum Sampling Frequency: 42MSPS (min) • ENOB @ fCLK = 42 MHz, f IN = 4.4 MHz: 7.2 Bits (typ) • Ensured No

文件：1.1542 Mbytes 页数：26 Pages

TI

德州仪器

丝印：8351DIM；Package：TSSOP；DRV8351-SEP: 40-V Three-Phase BLDC Gate Driver

1 Features • 40V Three Phase Half-Bridge Gate driver – Drives N-Channel MOSFETs (NMOS) – Gate Driver Supply (GVDD): 5-15V – MOSFET supply (SHx) supports up to 40V • Target Radiation Performance – SEL, SEB, and SET immune up to LET = 43 MeV-cm2 /mg – SET and SEFI characterized up to LET = 4

文件：1.32812 Mbytes 页数：29 Pages

TI

德州仪器

丝印：8351DIM；Package：TSSOP；DRV8351-SEP: 40-V Three-Phase BLDC Gate Driver

1 Features • 40V Three Phase Half-Bridge Gate driver – Drives N-Channel MOSFETs (NMOS) – Gate Driver Supply (GVDD): 5-15V – MOSFET supply (SHx) supports up to 40V • Target Radiation Performance – SEL, SEB, and SET immune up to LET = 43 MeV-cm2 /mg – SET and SEFI characterized up to LET = 4

文件：1.32812 Mbytes 页数：29 Pages

TI

德州仪器

丝印：8351DIM；Package：TSSOP；DRV8351-SEP: 40-V Three-Phase BLDC Gate Driver

1 Features • 40V Three Phase Half-Bridge Gate driver – Drives N-Channel MOSFETs (NMOS) – Gate Driver Supply (GVDD): 5-15V – MOSFET supply (SHx) supports up to 40V • Target Radiation Performance – SEL, SEB, and SET immune up to LET = 43 MeV-cm2 /mg – SET and SEFI characterized up to LET = 4

文件：1.32812 Mbytes 页数：29 Pages

TI

德州仪器

Electronic, 12 C #24 Str TC, FEP Ins, OSTC Brd, FEP Jkt, CMP

Product Description High Temperature Electronic, 12 Conductor 24AWG (7x32) Tinned Copper, FEP Insulation, Overall Beldfoil®+Tinned Copper Braid(85) Shield, FEP Outer Jacket, CMP

文件：225.24 Kbytes 页数：2 Pages

BELDEN

百通

Electronic, 12 C #24 Str TC, FEP Ins, OSTC Brd, FEP Jkt, CMP

Product Description High Temperature Electronic, 12 Conductor 24AWG (7x32) Tinned Copper, FEP Insulation, Overall Beldfoil®+Tinned Copper Braid(85) Shield, FEP Outer Jacket, CMP

文件：225.24 Kbytes 页数：2 Pages

BELDEN

百通

Electronic, 15 C #24 Str TC, FEP Ins, OSTC Brd, FEP Jkt, CMP

Product Description High Temperature Electronic, 15 Conductor 24AWG (7x32) Tinned Copper, FEP Insulation, Overall Beldfoil®+Tinned Copper Braid(85) Shield, FEP Outer Jacket, CMP

文件：224.47 Kbytes 页数：2 Pages

BELDEN

百通