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DRV8351DIMPWTSEP中文资料德州仪器数据手册PDF规格书

DRV8351DIMPWTSEP
厂商型号

DRV8351DIMPWTSEP

功能描述

DRV8351-SEP: 40-V Three-Phase BLDC Gate Driver

丝印标识

8351DIM

封装外壳

TSSOP

文件大小

1.32812 Mbytes

页面数量

29

生产厂商 Texas Instruments
企业简称

TI德州仪器

中文名称

美国德州仪器公司官网

原厂标识
数据手册

下载地址一下载地址二到原厂下载

更新时间

2025-5-19 8:14:00

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DRV8351DIMPWTSEP规格书详情

1 Features

• 40V Three Phase Half-Bridge Gate driver

– Drives N-Channel MOSFETs (NMOS)

– Gate Driver Supply (GVDD): 5-15V

– MOSFET supply (SHx) supports up to 40V

• Target Radiation Performance

– SEL, SEB, and SET immune up to LET = 43

MeV-cm2 /mg

– SET and SEFI characterized up to LET = 43

MeV-cm2 /mg

– TID assured for every wafer lot up to 30

krad(Si)

– TID characterized up to 30 krad(Si)

• Space-enhanced plastic (space EP):

– Controlled Baseline

– One Assembly/Test Site

– One Fabrication site

– Extended Product Life Cycle

– Product Traceability

• Integrated Bootstrap Diodes

• Supports Inverting and Non-Inverting INLx inputs

• Bootstrap gate drive architecture

– 750mA source current

– 1.5- sink current

• Low leakage current on SHx pins (<55μA)

• Absolute maximum BSTx voltage up to 57.5V

• Supports negative transients up to -22V on SHx

• Built-in cross conduction prevention

• Fixed deadtime insertion of 200nS

• Supports 3.3V and 5V logic inputs with 20V Abs

max

• 4nS typical propagation delay matching

• Compact TSSOP package

• Efficient system design with Power Blocks

• Integrated protection features

– BST undervoltage lockout (BSTUV)

– GVDD undervoltage (GVDDUV)

2 Applications

Supports Defence, Aerospace and Medical

Applications

• Thruster Gimbal Mechanism

• Antenna Pointing Mechanism

• Reaction Wheel

• Propellant Control Valve

3 Description

DRV8351-SEP is a three phase half-bridge gate

driver, capable of driving high-side and low-side

N-channel power MOSFETs. The DRV8351-SEPD

generates the correct gate drive voltages using an

integrated bootstrap diode and external capacitor for

the high-side MOSFETs. GVDD is used to generate

gate drive voltage for the low-side MOSFETs. The

Gate Drive architecture supports peak up to 750mA

source and 1.5A sink currents.

The phase pins SHx are able to tolerate significant

negative voltage transients; while high side gate

driver supply BSTx and GHx can support higher

positive voltage transients (57.5V) abs max voltage

which improve the robustness of the system. Small

propagation delay and delay matching specifications

minimize the dead-time requirement which further

improves efficiency. Undervoltage protection is

provided for both low and high sides through GVDD

and BST undervoltage lockout.

供应商 型号 品牌 批号 封装 库存 备注 价格
TI(德州仪器)
24+
QFN40EP(6x6)
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
询价
TI(德州仪器)
2024+
N/A
500000
诚信服务,绝对原装原盘
询价
TI(德州仪器)
25+
N/A
6000
原装,请咨询
询价
TI(德州仪器)
24+
NA/
8735
原厂直销,现货供应,账期支持!
询价
TI
24+
WQFN-40
9000
只做原装正品 有挂有货 假一赔十
询价
TI
24+
N/A
8000
全新原装正品,现货销售
询价
Texas Instruments
23+/24+
40-WFQFN
8600
只供原装进口公司现货+可订货
询价
TI(德州仪器)
23+
N/A
6000
公司只做原装,可来电咨询
询价
TI(德州仪器)
24+
N/A
6000
原厂原装现货订货价格优势终端BOM表可配单提供样品
询价
TI
23+
N/A
8000
专注配单,只做原装进口现货
询价