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DRV8351DIMPWTSEP中文资料德州仪器数据手册PDF规格书
DRV8351DIMPWTSEP规格书详情
1 Features
• 40V Three Phase Half-Bridge Gate driver
– Drives N-Channel MOSFETs (NMOS)
– Gate Driver Supply (GVDD): 5-15V
– MOSFET supply (SHx) supports up to 40V
• Target Radiation Performance
– SEL, SEB, and SET immune up to LET = 43
MeV-cm2 /mg
– SET and SEFI characterized up to LET = 43
MeV-cm2 /mg
– TID assured for every wafer lot up to 30
krad(Si)
– TID characterized up to 30 krad(Si)
• Space-enhanced plastic (space EP):
– Controlled Baseline
– One Assembly/Test Site
– One Fabrication site
– Extended Product Life Cycle
– Product Traceability
• Integrated Bootstrap Diodes
• Supports Inverting and Non-Inverting INLx inputs
• Bootstrap gate drive architecture
– 750mA source current
– 1.5- sink current
• Low leakage current on SHx pins (<55μA)
• Absolute maximum BSTx voltage up to 57.5V
• Supports negative transients up to -22V on SHx
• Built-in cross conduction prevention
• Fixed deadtime insertion of 200nS
• Supports 3.3V and 5V logic inputs with 20V Abs
max
• 4nS typical propagation delay matching
• Compact TSSOP package
• Efficient system design with Power Blocks
• Integrated protection features
– BST undervoltage lockout (BSTUV)
– GVDD undervoltage (GVDDUV)
2 Applications
Supports Defence, Aerospace and Medical
Applications
• Thruster Gimbal Mechanism
• Antenna Pointing Mechanism
• Reaction Wheel
• Propellant Control Valve
3 Description
DRV8351-SEP is a three phase half-bridge gate
driver, capable of driving high-side and low-side
N-channel power MOSFETs. The DRV8351-SEPD
generates the correct gate drive voltages using an
integrated bootstrap diode and external capacitor for
the high-side MOSFETs. GVDD is used to generate
gate drive voltage for the low-side MOSFETs. The
Gate Drive architecture supports peak up to 750mA
source and 1.5A sink currents.
The phase pins SHx are able to tolerate significant
negative voltage transients; while high side gate
driver supply BSTx and GHx can support higher
positive voltage transients (57.5V) abs max voltage
which improve the robustness of the system. Small
propagation delay and delay matching specifications
minimize the dead-time requirement which further
improves efficiency. Undervoltage protection is
provided for both low and high sides through GVDD
and BST undervoltage lockout.
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
TI(德州仪器) |
24+ |
QFN40EP(6x6) |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
询价 | ||
TI(德州仪器) |
2024+ |
N/A |
500000 |
诚信服务,绝对原装原盘 |
询价 | ||
TI(德州仪器) |
25+ |
N/A |
6000 |
原装,请咨询 |
询价 | ||
TI(德州仪器) |
24+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
询价 | ||
TI |
24+ |
WQFN-40 |
9000 |
只做原装正品 有挂有货 假一赔十 |
询价 | ||
TI |
24+ |
N/A |
8000 |
全新原装正品,现货销售 |
询价 | ||
Texas Instruments |
23+/24+ |
40-WFQFN |
8600 |
只供原装进口公司现货+可订货 |
询价 | ||
TI(德州仪器) |
23+ |
N/A |
6000 |
公司只做原装,可来电咨询 |
询价 | ||
TI(德州仪器) |
24+ |
N/A |
6000 |
原厂原装现货订货价格优势终端BOM表可配单提供样品 |
询价 | ||
TI |
23+ |
N/A |
8000 |
专注配单,只做原装进口现货 |
询价 |