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CSD83325LT.B中文资料德州仪器数据手册PDF规格书
CSD83325LT.B规格书详情
1 Features
• Common drain configuration
• Low-on resistance
• Small footprint of 2.2 mm × 1.15 mm
• Lead free
• RoHS compliant
• Halogen free
• Gate ESD protection
2 Applications
• Battery management
• Battery protection
3 Description
This 12-V, 9.9-mΩ, 2.2-mm × 1.15-mm LGA Dual
NexFET™ power MOSFET is designed to minimize
resistance and gate charge in a small footprint. Its
small footprint and common drain configuration make
the device ideal for battery pack applications in small
handheld devices.
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TI(德州仪器) |
23+ |
WSON-6 |
15000 |
专业帮助客户找货 配单,诚信可靠! |
询价 | ||
TI/德州仪器 |
24+ |
WSON6 |
880000 |
明嘉莱只做原装正品现货 |
询价 | ||
TI |
24+ |
WSON6 |
5000 |
全新原装正品,现货销售 |
询价 | ||
TI |
18+ |
SMD |
10 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
TI |
三年内 |
1983 |
只做原装正品 |
询价 | |||
TI(德州仪器) |
24+/25+ |
10000 |
原装正品现货库存价优 |
询价 | |||
TI |
23+ |
SMD |
12800 |
公司只有原装 欢迎来电咨询。 |
询价 | ||
24+ |
N/A |
52000 |
一级代理-主营优势-实惠价格-不悔选择 |
询价 | |||
Texas Instruments(德州仪器) |
24+ |
690000 |
代理渠道/支持实单/只做原装 |
询价 | |||
TI |
16+ |
WSON |
10000 |
原装正品 |
询价 |
