首页>CSD83325LT.B>规格书详情
CSD83325LT.B中文资料德州仪器数据手册PDF规格书
CSD83325LT.B规格书详情
1 Features
• Common drain configuration
• Low-on resistance
• Small footprint of 2.2 mm × 1.15 mm
• Lead free
• RoHS compliant
• Halogen free
• Gate ESD protection
2 Applications
• Battery management
• Battery protection
3 Description
This 12-V, 9.9-mΩ, 2.2-mm × 1.15-mm LGA Dual
NexFET™ power MOSFET is designed to minimize
resistance and gate charge in a small footprint. Its
small footprint and common drain configuration make
the device ideal for battery pack applications in small
handheld devices.
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TI |
21+ |
8080 |
只做原装,质量保证 |
询价 | |||
TI |
24+ |
WSON6 |
5000 |
全新原装正品,现货销售 |
询价 | ||
TI/德州仪器 |
21+ |
WSON-6 |
51000 |
原装正品 |
询价 | ||
TI/德州仪器 |
24+ |
WSON-6 |
9600 |
原装现货,优势供应,支持实单! |
询价 | ||
TI |
三年内 |
1983 |
只做原装正品 |
询价 | |||
TI |
16+ |
WSON |
10000 |
原装正品 |
询价 | ||
TI(德州仪器) |
2447 |
WSON-6 |
115000 |
3000个/圆盘一级代理专营品牌!原装正品,优势现货, |
询价 | ||
Texas Instruments |
2022+ |
6-WSON(2x2) |
38550 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 | ||
TI |
82 |
询价 | |||||
TI |
2012 |
con |
82 |
现货常备产品原装可到京北通宇商城查价格 |
询价 |
