Phase Control Thyristors (Stud Version), 80 A

文件：160.59 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

丝印：80R1K4P7；Package：PG-TO220FullPAK；800V CoolMOS짧 P7 Power Transistor

Features •Best-in-classFOMRDS(on)*Eoss;reducedQg,Ciss,andCoss •Best-in-classDPAKRDS(on) •Best-in-classV(GS)thof3VandsmallestV(GS)thvariationof±0.5V •IntegratedZenerDiodeESDprotection •Best-in-classCoolMOS™qualityandreliability;qualifiedforindustrial gradeapplicationsaccordingtoJEDEC(J-STD20a

文件：971.82 Kbytes 页数：13 Pages

INFINEON

英飞凌

丝印：80R1K2P7；Package：SMD；800V CoolMOSª P7 Power Device

Features • Best-in-class FOM RDS(on) * Eoss; reduced Qg, Ciss, and Coss • Best-in-class DPAK RDS(on) • Best-in-class V(GS)th of 3V and smallest V(GS)th variation of ±0.5V • Integrated Zener Diode ESD protection • Fully optimized portfolio

文件：1.81556 Mbytes 页数：13 Pages

INFINEON

英飞凌

丝印：80R1K4P7；Package：ThinPAK5x6SMD；800V CoolMOS짧 P7 Power Device

MOSFET 800V CoolMOSª P7 Power Device The latest 800V CoolMOS™ P7 series sets a new benchmark in 800V super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon’s over 18 years pioneering super junction technology innovation.

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INFINEON

英飞凌

丝印：80R2K0P7；Package：SMD；800V CoolMOSª P7 Power Device

Features • Best-in-class FOM RDS(on) * Eoss; reduced Qg, Ciss, and Coss • Best-in-class DPAK RDS(on) • Best-in-class V(GS)th of 3V and smallest V(GS)th variation of ±0.5V • Integrated Zener Diode ESD protection • Fully optimized portfolio

文件：1.80987 Mbytes 页数：13 Pages

INFINEON

英飞凌

丝印：80R2K0；Package：PG-SOT223；800V CoolMOS짧 P7 Power Transistor

800V CoolMOSª P7 Power Transistor Potential applications    Recommended for hard and soft switching flyback topologies for LED    Lighting, low power Chargers and Adapters, Audio, AUX power and    Industrial power. Also suitable for PFC stage in Consumer applications    andSolar.

文件：1.04623 Mbytes 页数：13 Pages

INFINEON

英飞凌

丝印：80R1K2QZ；Package：TO-220F；800V 1.2Ω N-channel MOSFET

 Description MMF80R1K2QZ is power MOSFET using Magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to

文件：1.33225 Mbytes 页数：10 Pages

MGCHIP

丝印：80R290R；Package：TO-220F；800V 0.29Ω N-channel MOSFET

 Description MMF80R290R is power MOSFET using Magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user-friendly devices give an advantage of low EMI to

文件：710.47 Kbytes 页数：10 Pages

MGCHIP

丝印：80R300C；Package：TO-220F；800V Super-junction Power MOSFET

Description 800V Super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETs，designed accordingtotheSJprinciple. The deep trench SJ MOSFET provide an extremely low switching, communication and conduction losses devicewithhighest robustness

文件：1.20968 Mbytes 页数：16 Pages

WUMC

紫光国微

丝印：80R300C；Package：TO-220F；800V Super-junction Power MOSFET

Description 800V Super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETs，designed accordingtotheSJprinciple. The deep trench SJ MOSFET provide an extremely low switching, communication and conduction losses devicewithhighest robustness

文件：1.20966 Mbytes 页数：16 Pages

WUMC

紫光国微