N-Channel 100-V (D-S) 175 째C MOSFET

文件：974.83 Kbytes 页数：7 Pages

VBSEMI

微碧半导体

TO252,N管，80A,100V,MOSFET

XFSEMI

先丰半导体

N-Channel 100-V (D-S) 175 째C MOSFET

FEATURES • TrenchFET® Power MOSFET • 175 °C Maximum Junction Temperature • Compliant to RoHS Directive 2002/95/EC

文件：1.92016 Mbytes 页数：7 Pages

VBSEMI

微碧半导体

N-Channel 100-V (D-S) MOSFET

文件：966.73 Kbytes 页数：7 Pages

VBSEMI

微碧半导体

丝印：80N100；Package：TO-220-3L；N-Channel Super Trench Power MOSFET

General Features VDS =100V,ID =80A RDS(ON) =7.2mΩ(typical) @ VGS=10V RDS(ON) =9.5mΩ(typical) @ VGS=4.5V Excellent gate charge x RDS(on) product(FOM) Very low on-resistance RDS(on) 175 °C operating temperature Pb-free lead plating 100% UIS tested

文件：416.34 Kbytes 页数：7 Pages

RECTRON

丽正国际

丝印：80N100；Package：DFN5X6-8L；N-Channel Enhancement Mode Power MOSFET

General Features VDS =100V,ID =80A RDS(ON)

文件：200.1 Kbytes 页数：6 Pages

RECTRON

丽正国际

丝印：80N100；Package：TO-220-3L；N-Channel Super Trench Power MOSFET

General Features VDS =100V,ID =80A RDS(ON) =7.2mΩ(typical) @ VGS=10V RDS(ON) =9.5mΩ(typical) @ VGS=4.5V Excellent gate charge x RDS(on) product(FOM) Very low on-resistance RDS(on) 175 °C operating temperature Pb-free lead plating 100% UIS tested

文件：276.1 Kbytes 页数：7 Pages

RECTRON

丽正国际

丝印：80N10LF7；Package：H2PAK-2；Automotive-grade N-channel 100 V, 7 mΩ typ., 80 A, STripFET™ F7 Power MOSFET in an H2PAK-2 package

Features • AEC-Q101 qualified • Among the lowest RDS(on) on the market • Excellent FoM (figure of merit) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness Applications • Switching applications Description This N-channel Power MOSFET utilizes STripFET™ F7 technology wi

文件：626.24 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

DFN-中低压MOS

GOODWORK

固得沃克电子