N-Channel 100-V (D-S) 175 째C MOSFET

FEATURES • TrenchFET® Power MOSFET • 175 °C Maximum Junction Temperature • Compliant to RoHS Directive 2002/95/EC

文件：1.92016 Mbytes 页数：7 Pages

VBSEMI

微碧半导体

丝印：80N10LF7；Package：H2PAK-2；Automotive-grade N-channel 100 V, 7 mΩ typ., 80 A, STripFET™ F7 Power MOSFET in an H2PAK-2 package

Features • AEC-Q101 qualified • Among the lowest RDS(on) on the market • Excellent FoM (figure of merit) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness Applications • Switching applications Description This N-channel Power MOSFET utilizes STripFET™ F7 technology wi

文件：626.24 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL MOSFET in a TO-220 Plastic Package

文件：1.06093 Mbytes 页数：6 Pages

FOSHAN

蓝箭电子

N-Channel MOSFET uses advanced trench technology

文件：1.6474 Mbytes 页数：5 Pages

DOINGTER

杜因特

N-CHANNEL MOSFET in a TO-263 Plastic Package

文件：887.74 Kbytes 页数：6 Pages

FOSHAN

蓝箭电子