丝印：80N10LF7；Package：H2PAK-2；Automotive-grade N-channel 100 V, 7 mΩ typ., 80 A, STripFET™ F7 Power MOSFET in an H2PAK-2 package

Features • AEC-Q101 qualified • Among the lowest RDS(on) on the market • Excellent FoM (figure of merit) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness Applications • Switching applications Description This N-channel Power MOSFET utilizes STripFET™ F7 technology wi

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STMICROELECTRONICS

意法半导体

N沟道100 V、0.008 Ohm典型值、80 A STripFET F7功率MOSFET，H2PAK-2封装

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. • AEC-Q101 qualified \n• Among the lowest RDS(on) on the market \n• Excellent FoM (figure of merit) \n• Low Crss/Ciss ratio for EMI immunity \n• High avalanche ruggedness;

ST

意法半导体

BGA

ST

上传：深圳市凯睿晟科技有限公司

BGA

ST/意法

上传：芯灿微（深圳）科技有限公司

ESOP8

SUNTO

上传：深圳市鼎欣微电子有限公司