7A, 650V N-CHANNEL POWER MOSFET

 DESCRIPTION The UTC 7N65-HC is a N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the

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UTC

友顺

7A, 650V N-CHANNEL POWER MOSFET

The UTC 7N65-HC is a N-channel mode power MOSFETusing UTC’s advanced technology to provide customers withplanar stripe and DMOS technology. This technology allows aminimum on-state resistance and superior switchingperformance. It also can withstand high energy pulse in theavalanche and commutation m RDS(ON) < 1.2Ω @ VGS=10V, ID=3.5A Fast Switching With 100% Avalanche Tested;

UTC

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N-CHANNEL POWER MOSFET

Features ● RDS(ON)

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SUNMATE

森美特

7.4A, 650V N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 7N65K is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications i

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UTC

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N-Channel 650V (D-S) Power MOSFET

FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) APPLICATIONS • Server and telecom power supplies • Switch mode power supplies (SMPS) • Power factor correction

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VBSEMI

微碧半导体