丝印：7884；Package：SOT-23(DBV)；10-/8-BIT, 3-MSPS, MICRO-POWER, MINIATURE SAR ANALOG-TO-DIGITAL CONVERTERS

1FEATURES · 3-MHz Sample Rate Serial Device · 10-Bit Resolution – ADS7884 · 8-Bit Resolution – ADS7885 · Zero Latency · 48-MHz Serial Interface · Supply Range: 2.7 V to 5.5 V · Low Power Dissipation: – 6.8 mW at 3-V VDD, 2.5 MSPS – 15 mw at 5-V VDD, 3 MSPS · ±0.3 LSB INL, ±0.3 LSB DNL –

文件：1.39066 Mbytes 页数：25 Pages

TI

德州仪器

丝印：7884；Package：SOT-23(DBV)；10-/8-BIT, 3-MSPS, MICRO-POWER, MINIATURE SAR ANALOG-TO-DIGITAL CONVERTERS

1FEATURES · 3-MHz Sample Rate Serial Device · 10-Bit Resolution – ADS7884 · 8-Bit Resolution – ADS7885 · Zero Latency · 48-MHz Serial Interface · Supply Range: 2.7 V to 5.5 V · Low Power Dissipation: – 6.8 mW at 3-V VDD, 2.5 MSPS – 15 mw at 5-V VDD, 3 MSPS · ±0.3 LSB INL, ±0.3 LSB DNL –

文件：1.39066 Mbytes 页数：25 Pages

TI

德州仪器

丝印：7884；Package：SOT-23(DBV)；10-/8-BIT, 3-MSPS, MICRO-POWER, MINIATURE SAR ANALOG-TO-DIGITAL CONVERTERS

1FEATURES · 3-MHz Sample Rate Serial Device · 10-Bit Resolution – ADS7884 · 8-Bit Resolution – ADS7885 · Zero Latency · 48-MHz Serial Interface · Supply Range: 2.7 V to 5.5 V · Low Power Dissipation: – 6.8 mW at 3-V VDD, 2.5 MSPS – 15 mw at 5-V VDD, 3 MSPS · ±0.3 LSB INL, ±0.3 LSB DNL –

文件：1.39066 Mbytes 页数：25 Pages

TI

德州仪器

丝印：7884；Package：SOT-23(DBV)；10-/8-BIT, 3-MSPS, MICRO-POWER, MINIATURE SAR ANALOG-TO-DIGITAL CONVERTERS

1FEATURES · 3-MHz Sample Rate Serial Device · 10-Bit Resolution – ADS7884 · 8-Bit Resolution – ADS7885 · Zero Latency · 48-MHz Serial Interface · Supply Range: 2.7 V to 5.5 V · Low Power Dissipation: – 6.8 mW at 3-V VDD, 2.5 MSPS – 15 mw at 5-V VDD, 3 MSPS · ±0.3 LSB INL, ±0.3 LSB DNL –

文件：1.39066 Mbytes 页数：25 Pages

TI

德州仪器

丝印：7885；Package：SOT-23(DBV)；10-/8-BIT, 3-MSPS, MICRO-POWER, MINIATURE SAR ANALOG-TO-DIGITAL CONVERTERS

1FEATURES · 3-MHz Sample Rate Serial Device · 10-Bit Resolution – ADS7884 · 8-Bit Resolution – ADS7885 · Zero Latency · 48-MHz Serial Interface · Supply Range: 2.7 V to 5.5 V · Low Power Dissipation: – 6.8 mW at 3-V VDD, 2.5 MSPS – 15 mw at 5-V VDD, 3 MSPS · ±0.3 LSB INL, ±0.3 LSB DNL –

文件：1.39066 Mbytes 页数：25 Pages

TI

德州仪器

丝印：7885；Package：SOT-23(DBV)；10-/8-BIT, 3-MSPS, MICRO-POWER, MINIATURE SAR ANALOG-TO-DIGITAL CONVERTERS

1FEATURES · 3-MHz Sample Rate Serial Device · 10-Bit Resolution – ADS7884 · 8-Bit Resolution – ADS7885 · Zero Latency · 48-MHz Serial Interface · Supply Range: 2.7 V to 5.5 V · Low Power Dissipation: – 6.8 mW at 3-V VDD, 2.5 MSPS – 15 mw at 5-V VDD, 3 MSPS · ±0.3 LSB INL, ±0.3 LSB DNL –

文件：1.39066 Mbytes 页数：25 Pages

TI

德州仪器

丝印：7885；Package：SOT-23(DBV)；10-/8-BIT, 3-MSPS, MICRO-POWER, MINIATURE SAR ANALOG-TO-DIGITAL CONVERTERS

1FEATURES · 3-MHz Sample Rate Serial Device · 10-Bit Resolution – ADS7884 · 8-Bit Resolution – ADS7885 · Zero Latency · 48-MHz Serial Interface · Supply Range: 2.7 V to 5.5 V · Low Power Dissipation: – 6.8 mW at 3-V VDD, 2.5 MSPS – 15 mw at 5-V VDD, 3 MSPS · ±0.3 LSB INL, ±0.3 LSB DNL –

文件：1.39066 Mbytes 页数：25 Pages

TI

德州仪器

丝印：7885；Package：SOT-23(DBV)；10-/8-BIT, 3-MSPS, MICRO-POWER, MINIATURE SAR ANALOG-TO-DIGITAL CONVERTERS

1FEATURES · 3-MHz Sample Rate Serial Device · 10-Bit Resolution – ADS7884 · 8-Bit Resolution – ADS7885 · Zero Latency · 48-MHz Serial Interface · Supply Range: 2.7 V to 5.5 V · Low Power Dissipation: – 6.8 mW at 3-V VDD, 2.5 MSPS – 15 mw at 5-V VDD, 3 MSPS · ±0.3 LSB INL, ±0.3 LSB DNL –

文件：1.39066 Mbytes 页数：25 Pages

TI

德州仪器

丝印：788055A；Package：SOT223；N-channel TrenchMOS standard level FET

1. General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Nexperia General Purpose Automotive (GPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical

文件：763.39 Kbytes 页数：12 Pages

NEXPERIA

安世

丝印：788055；Package：SOT223；N-channel TrenchMOS standard level FET

1. General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Nexperia General Purpose Automotive (GPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical

文件：763.39 Kbytes 页数：12 Pages

NEXPERIA

安世