N-channel TrenchMOS standard level FET

General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Nexperia General Purpose Automotive (GPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applic

文件：98.49 Kbytes 页数：13 Pages

恩XP

N-Channel 0-V (D-S) MOSFET

FEATURES • Halogen-free • TrenchFET® Power MOSFET APPLICATIONS • Load Switches for Portable Devices

文件：1.08995 Mbytes 页数：8 Pages

VBSEMI

微碧半导体

丝印：788055A；Package：SOT223；N-channel TrenchMOS standard level FET

1. General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Nexperia General Purpose Automotive (GPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical

文件：763.39 Kbytes 页数：12 Pages

NEXPERIA

安世

TrenchMOS transistor standard level FET

GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technolgy the device features very low on-state resistance and has integral zener diodes giving ESD protection. It is intended for use in au

文件：53.96 Kbytes 页数：9 Pages

PHI

PHI

N-channel TrenchMOS standard level FET

文件：223.08 Kbytes 页数：12 Pages

PHI

PHI

N-channel TrenchMOS standard level FET

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Nexperia's General Purpose Automotive (GPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. • AEC Q101 compliant\n• Low conduction losses due to low on-state resistance\n• Suitable for standard level gate drive sources;

Nexperia

安世