丝印：75372；Package：SOIC；DUAL MOSFET DRIVER

• Dual Circuits Capable of Driving High-Capacitance Loads at High Speeds • Output Supply Voltage Range up to 24 V • Low Standby Power Dissipation description The SN75372 is a dual NAND gate interface circuit designed to drive power MOSFETs from TTL inputs. It provides high current and vol

文件：656.7 Kbytes 页数：21 Pages

TI

德州仪器

丝印：75372；Package：SOIC；DUAL MOSFET DRIVER

Dual Circuits Capable of Driving High-Capacitance Loads at High Speeds Output Supply Voltage Range up to 24 V Low Standby Power Dissipation description The SN75372 is a dual NAND gate interface circuit designed to drive power MOSFETs from TTL inputs. It provides high current and voltage

文件：624.28 Kbytes 页数：21 Pages

TI

德州仪器

丝印：75372；Package：SOIC；DUAL MOSFET DRIVER

Dual Circuits Capable of Driving High-Capacitance Loads at High Speeds Output Supply Voltage Range up to 24 V Low Standby Power Dissipation description The SN75372 is a dual NAND gate interface circuit designed to drive power MOSFETs from TTL inputs. It provides high current and voltage

文件：624.28 Kbytes 页数：21 Pages

TI

德州仪器

丝印：75372；Package：SOIC；DUAL MOSFET DRIVER

• Dual Circuits Capable of Driving High-Capacitance Loads at High Speeds • Output Supply Voltage Range up to 24 V • Low Standby Power Dissipation description The SN75372 is a dual NAND gate interface circuit designed to drive power MOSFETs from TTL inputs. It provides high current and vol

文件：656.7 Kbytes 页数：21 Pages

TI

德州仪器

丝印：75372；Package：SOIC；DUAL MOSFET DRIVER

Dual Circuits Capable of Driving High-Capacitance Loads at High Speeds Output Supply Voltage Range up to 24 V Low Standby Power Dissipation description The SN75372 is a dual NAND gate interface circuit designed to drive power MOSFETs from TTL inputs. It provides high current and voltage

文件：624.28 Kbytes 页数：21 Pages

TI

德州仪器