Low-power dual 2-input NAND gate

The 74AUP2G00 provides dual 2-input NAND function.\n Schmitt-trigger action at all inputs makes the circuit tolerant to slower input rise and fall times across the entire VCC range from 0.8 V to 3.6 V.\n This device ensures a very low static and dynamic power consumption across the entire VCC • Wide supply voltage range from 0.8 V to 3.6 V\n• High noise immunity\n• Complies with JEDEC standards:• JESD8-12 (0.8 V to 1.3 V)\n• JESD8-11 (0.9 V to 1.65 V)\n• JESD8-7 (1.2 V to 1.95 V)\n• JESD8-5 (1.8 V to 2.7 V)\n• JESD8-B (2.7 V to 3.6 V)\n\n• ESD protection:• HBM JESD22-A114F Class 3A excee;

Nexperia

安世

丝印：pA；Package：SOT1233-2；Low-power dual 2-input NAND gate

1. General description The 74AUP2G00 provides dual 2-input NAND function. Schmitt trigger action at all inputs makes the circuit tolerant to slower input rise and fall times across the entire VCC range from 0.8 V to 3.6 V. This device ensures a very low static and dynamic power consumption acr

文件：302.02 Kbytes 页数：20 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

Package：8-XFDFN 裸露焊盘；包装：卷带（TR） 类别：集成电路（IC） 门和反相器 描述：IC GATE NAND 2CH 2-INP 8X2SON

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

LOW-POWER DUAL 2-INPUT POSITIVE-NAND GATE

文件：695.46 Kbytes 页数：20 Pages

TI

德州仪器

LOW-POWER DUAL 2-INPUT POSITIVE-NAND GATE

1FEATURES • Qualified for Automotive Applications • Low Static-Power Consumption (ICC = 1.7 mA Maximum) • Low Dynamic-Power Consumption (Cpd = 4.3 pF Typ at 3.3 V) • Low Input Capacitance (Ci = 1.5 pF Typical) • Low Noise – Overshoot and Undershoot

文件：871.75 Kbytes 页数：16 Pages

TI

德州仪器

LOW-POWER DUAL 2-INPUT POSITIVE-NAND GATE

文件：695.46 Kbytes 页数：20 Pages

TI

德州仪器