2-input NAND gate

DESCRIPTION The 74AHC1G/AHCT1G00 is a high-speed Si-gate CMOS device. The 74AHC1G/AHCT1G00 provides the 2-input NAND function. FEATURES • Symmetrical output impedance • High noise immunity • ESD protection: – HBM EIA/JESD22-A114-A exceeds 2000 V – MM EIA/JESD22-A115-A exceeds

文件：80.12 Kbytes 页数：12 Pages

PHI

PHI

SINGLE 2 INPUT POSITIVE NAND GATE

Description The 74AHCT1G00 is a single 2-input positive NAND gate with a standard totem pole output. The device is designed for operation with a power supply range of 4.5V to 5.5V. Features • Supply Voltage Range from 4.5V to 5.5V • ± 8 mA Output Drive at 5.0V • CMOS low power consumption •

文件：179.79 Kbytes 页数：8 Pages

DIODES

美台半导体

2-input NAND gate

General description 74AHC1G00 and 74AHCT1G00 are high-speed Si-gate CMOS devices. They provide a 2-input NAND function. The AHC device has CMOS input switching levels and supply voltage range 2 V to 5.5 V. The AHCT device has TTL input switching levels and supply voltage range 4.5 V to 5.5 V.

文件：77.5 Kbytes 页数：11 Pages

恩XP

恩XP Semiconductors [恩XP]^412

General description 74AHC1G00 and 74AHCT1G00 are high-speed Si-gate CMOS devices. They provide a 2-input NAND function. The AHC device has CMOS input switching levels and supply voltage range 2 V to 5.5 V. The AHCT device has TTL input switching levels and supply voltage range 4.5 V to 5.5 V.

文件：135.85 Kbytes 页数：12 Pages

恩XP

2-input NAND gate

1. General description The 74AHC1G00; 74AHCT1G00 is a single 2-input NAND gate. Inputs are overvoltage tolerant. This feature allows the use of these devices as translators in mixed voltage environments. 2. Features and benefits • Wide supply voltage range from 2.0 to 5.5 V • Overvoltage tole

文件：212 Kbytes 页数：11 Pages

NEXPERIA

安世

2-input NAND gate

文件：74.04 Kbytes 页数：16 Pages

PHI

PHI

Single-gate

The 74AHCT1G00 is a single 2-input positive NAND gate\nwith a standard totem pole output. The device is designed for\noperation with a power supply range of 4.5V to 5.5V. The\ngate performs the positive Boolean function:\n\nY = A ⊕B or Y = A + B •Supply Voltage Range from 4.5V to 5.5V•± 8 mA Output Drive at 5.0V•CMOS low power consumption•Schmitt Trigger Action at All Inputs Make the Circuit Tolerant for Slower Input Rise and Fall Time.•ESD Protection per JESD 22 - Exceeds 200-V Machine Model (A115-A) - Exceeds 2000-V Human Body Model (;

Diodes

美台半导体

丝印：B00G；Package：SOT-23；SN74AHCT1G00 Single 2-Input Positive-NAND Gate

1 Features • Operating Range of 4.5 V to 5.5 V • Maximum tpd of 7.1 ns at 5 V • Low Power Consumption, 10-μA Maximum ICC • ±8-mA Output Drive at 5 V • Inputs Are TTL-Voltage Compatible • Latch-up Performance Exceeds 250 mA Per JESD 17 2 Applications • IP Phones • Notebook PCs • Printe

文件：1.05973 Mbytes 页数：23 Pages

TI

德州仪器

丝印：B00G；Package：SOT-23；SN74AHCT1G00 Single 2-Input Positive-NAND Gate

1 Features • Operating Range of 4.5 V to 5.5 V • Maximum tpd of 7.1 ns at 5 V • Low Power Consumption, 10-μA Maximum ICC • ±8-mA Output Drive at 5 V • Inputs Are TTL-Voltage Compatible • Latch-up Performance Exceeds 250 mA Per JESD 17 2 Applications • IP Phones • Notebook PCs • Printe

文件：1.05973 Mbytes 页数：23 Pages

TI

德州仪器

丝印：B00G；Package：SOT-23；SN74AHCT1G00 Single 2-Input Positive-NAND Gate

1 Features • Operating Range of 4.5 V to 5.5 V • Maximum tpd of 7.1 ns at 5 V • Low Power Consumption, 10-μA Maximum ICC • ±8-mA Output Drive at 5 V • Inputs Are TTL-Voltage Compatible • Latch-up Performance Exceeds 250 mA Per JESD 17 2 Applications • IP Phones • Notebook PCs • Printe

文件：1.05973 Mbytes 页数：23 Pages

TI

德州仪器