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71V67603S133BG	文件：302.92 Kbytes Page：23 Pages	256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighsystemspeed: –166MHz3.5nsclockaccesstime –150MHz3.8nsclockaccesstime –133MHz4.2nsclockaccesstime ◆Self-timedwritecyclewithglobalwritecontrol(GW),byte writeenable(BWE),andbytewrites(BWx) ◆L	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
71V67603S133BG	文件：100 bytes Page：1 Pages	包装：托盘封装/外壳：119-BGA 类别：集成电路（IC）存储器描述：IC SRAM 9MBIT PARALLEL 119PBGA	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
71V67603S133BG8	文件：302.92 Kbytes Page：23 Pages	256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighsystemspeed: –166MHz3.5nsclockaccesstime –150MHz3.8nsclockaccesstime –133MHz4.2nsclockaccesstime ◆Self-timedwritecyclewithglobalwritecontrol(GW),byte writeenable(BWE),andbytewrites(BWx) ◆L	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
71V67603S133BGG	文件：302.92 Kbytes Page：23 Pages	256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighsystemspeed: –166MHz3.5nsclockaccesstime –150MHz3.8nsclockaccesstime –133MHz4.2nsclockaccesstime ◆Self-timedwritecyclewithglobalwritecontrol(GW),byte writeenable(BWE),andbytewrites(BWx) ◆L	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
71V67603S133BGG8	文件：302.92 Kbytes Page：23 Pages	256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighsystemspeed: –166MHz3.5nsclockaccesstime –150MHz3.8nsclockaccesstime –133MHz4.2nsclockaccesstime ◆Self-timedwritecyclewithglobalwritecontrol(GW),byte writeenable(BWE),andbytewrites(BWx) ◆L	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
71V67603S133BGGI	文件：302.92 Kbytes Page：23 Pages	256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighsystemspeed: –166MHz3.5nsclockaccesstime –150MHz3.8nsclockaccesstime –133MHz4.2nsclockaccesstime ◆Self-timedwritecyclewithglobalwritecontrol(GW),byte writeenable(BWE),andbytewrites(BWx) ◆L	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
71V67603S133BGGI8	文件：302.92 Kbytes Page：23 Pages	256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighsystemspeed: –166MHz3.5nsclockaccesstime –150MHz3.8nsclockaccesstime –133MHz4.2nsclockaccesstime ◆Self-timedwritecyclewithglobalwritecontrol(GW),byte writeenable(BWE),andbytewrites(BWx) ◆L	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
71V67603S133BGI	文件：302.92 Kbytes Page：23 Pages	256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighsystemspeed: –166MHz3.5nsclockaccesstime –150MHz3.8nsclockaccesstime –133MHz4.2nsclockaccesstime ◆Self-timedwritecyclewithglobalwritecontrol(GW),byte writeenable(BWE),andbytewrites(BWx) ◆L	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
71V67603S133BGI8	文件：302.92 Kbytes Page：23 Pages	256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighsystemspeed: –166MHz3.5nsclockaccesstime –150MHz3.8nsclockaccesstime –133MHz4.2nsclockaccesstime ◆Self-timedwritecyclewithglobalwritecontrol(GW),byte writeenable(BWE),andbytewrites(BWx) ◆L	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
71V67603S133BGG	文件：100 bytes Page：1 Pages	包装：托盘封装/外壳：119-BGA 类别：集成电路（IC）存储器描述：IC SRAM 9MBIT PARALLEL 119PBGA	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
71V67603S133BGG8	文件：100 bytes Page：1 Pages	包装：托盘封装/外壳：119-BGA 类别：集成电路（IC）存储器描述：IC SRAM 9MBIT PARALLEL 119PBGA	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
71V67603S133BQ	文件：302.92 Kbytes Page：23 Pages	256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighsystemspeed: –166MHz3.5nsclockaccesstime –150MHz3.8nsclockaccesstime –133MHz4.2nsclockaccesstime ◆Self-timedwritecyclewithglobalwritecontrol(GW),byte writeenable(BWE),andbytewrites(BWx) ◆L	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
71V67603S133BQG	文件：302.92 Kbytes Page：23 Pages	256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighsystemspeed: –166MHz3.5nsclockaccesstime –150MHz3.8nsclockaccesstime –133MHz4.2nsclockaccesstime ◆Self-timedwritecyclewithglobalwritecontrol(GW),byte writeenable(BWE),andbytewrites(BWx) ◆L	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
71V67603S133BQGI	文件：302.92 Kbytes Page：23 Pages	256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighsystemspeed: –166MHz3.5nsclockaccesstime –150MHz3.8nsclockaccesstime –133MHz4.2nsclockaccesstime ◆Self-timedwritecyclewithglobalwritecontrol(GW),byte writeenable(BWE),andbytewrites(BWx) ◆L	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
71V67603S133BQI	文件：302.92 Kbytes Page：23 Pages	256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighsystemspeed: –166MHz3.5nsclockaccesstime –150MHz3.8nsclockaccesstime –133MHz4.2nsclockaccesstime ◆Self-timedwritecyclewithglobalwritecontrol(GW),byte writeenable(BWE),andbytewrites(BWx) ◆L	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
71V67603S133PFG	文件：302.92 Kbytes Page：23 Pages	256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighsystemspeed: –166MHz3.5nsclockaccesstime –150MHz3.8nsclockaccesstime –133MHz4.2nsclockaccesstime ◆Self-timedwritecyclewithglobalwritecontrol(GW),byte writeenable(BWE),andbytewrites(BWx) ◆L	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
71V67603S133PFGI	文件：302.92 Kbytes Page：23 Pages	256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighsystemspeed: –166MHz3.5nsclockaccesstime –150MHz3.8nsclockaccesstime –133MHz4.2nsclockaccesstime ◆Self-timedwritecyclewithglobalwritecontrol(GW),byte writeenable(BWE),andbytewrites(BWx) ◆L	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
IDT71V67603S133BGG	文件：986.08 Kbytes Page：23 Pages	256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect	IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司	IDT
IDT71V67603S133BGGI	文件：986.08 Kbytes Page：23 Pages	256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect	IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司	IDT
IDT71V67603S133BQG	文件：986.08 Kbytes Page：23 Pages	256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect	IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司	IDT

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产品属性

产品编号：
71V67603S133BG
制造商：
Renesas Electronics America Inc
类别：
集成电路（IC） > 存储器
包装：
托盘
存储器类型：
易失
存储器格式：
SRAM
技术：
SRAM - 同步，SDR
存储容量：
9Mb（256K x 36）
存储器接口：
并联
电压 - 供电：
3.135V ~ 3.465V
工作温度：
0°C ~ 70°C（TA）
安装类型：
表面贴装型
封装/外壳：
119-BGA
供应商器件封装：
119-PBGA（14x22）
描述：
IC SRAM 9MBIT PARALLEL 119PBGA

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市鹏顺微电子科技有限公司	71V67603S133BG	RENESAS(瑞萨)/IDT	2022+原装正品	PBGA-119(14x22)	18000	支持工厂BOM表配单公司只做原装正品货	询价
深圳市毅创辉电子科技有限公司	71V67603S133BG	RENESAS(瑞萨)	23+	119-PBGA (14.00L X 22.00W X 1.	840	全新、原装	询价
深圳市斌腾达科技有限公司	71V67603S133BG	IDT, Integrated Device Technol	21+	60-TFBGA	5280	进口原装!长期供应!绝对优势价格(诚信经营	询价
瀚佳科技(深圳)有限公司	71V67603S133BG	IDT, Integrated Device Technol	21+	119-PBGA(14x22)	56200	一级代理/放心采购	询价
深圳市艾宇欣科技有限公司	71V67603S133BG	IDT	1931+	N/A	1186	加我qq或微信，了解更多详细信息,体验一站式购物	询价
艾睿国际（香港）有限公司	71V67603S133BG	RENESAS(瑞萨)/IDT	2117+	PBGA-119(14x22)	315000	84个/托盘一级代理专营品牌!原装正品,优势现货,长	询价
深圳市科雨电子有限公司	71V67603S133BG	IDT	20+	BGA-119	84	就找我吧!--邀您体验愉快问购元件!	询价
深圳市冠亿通科技有限公司	71V67603S133BG	Renesas	21+		25000	原厂原包深圳现货主打品牌假一赔百可开票!	询价
讯运(深圳/上海)电子有限公司	71V67603S133BG	RENESAS(瑞萨)/IDT	2021+	PBGA-119(14x22)	499		询价
万三科技(深圳)有限公司	71V67603S133BG	RENESAS(瑞萨电子)	22+	NA	500000	万三科技,秉承原装,购芯无忧	询价

更多71V67603S133BG供应商更新时间2024-4-29 8:24:00

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