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71V67703S75BGGI

256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportsfastaccesstimes: –7.5nsupto117MHzclockfrequency –8.0nsupto100MHzclockfrequency –8.5nsupto87MHzclockfrequency ◆LBOinputselectsinterleavedorlinearburstmode ◆Self-timedwritecyclewithglobalwritec

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

71V67703S75BGGI

包装:托盘 封装/外壳:119-BGA 类别:集成电路(IC) 存储器 描述:IC SRAM 9MBIT PARALLEL 119PBGA

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

71V67703S75BGGI8

256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportsfastaccesstimes: –7.5nsupto117MHzclockfrequency –8.0nsupto100MHzclockfrequency –8.5nsupto87MHzclockfrequency ◆LBOinputselectsinterleavedorlinearburstmode ◆Self-timedwritecyclewithglobalwritec

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

71V67703S75BGGI8

包装:托盘 封装/外壳:119-BGA 类别:集成电路(IC) 存储器 描述:IC SRAM 9MBIT PARALLEL 119PBGA

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

71V67703S75BG

256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs,SingleCycleDeselect

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportsfastaccesstimes: –7.5nsupto117MHzclockfrequency –8.0nsupto100MHzclockfrequency –8.5nsupto87MHzclockfrequency ◆LBOinputselectsinterleavedorlinearburstmode ◆Self-timedwritecyclewithglobalwritec

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

71V67703S75BGG

256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs,SingleCycleDeselect

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportsfastaccesstimes: –7.5nsupto117MHzclockfrequency –8.0nsupto100MHzclockfrequency –8.5nsupto87MHzclockfrequency ◆LBOinputselectsinterleavedorlinearburstmode ◆Self-timedwritecyclewithglobalwritec

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

71V67703S75BQ

256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs,SingleCycleDeselect

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportsfastaccesstimes: –7.5nsupto117MHzclockfrequency –8.0nsupto100MHzclockfrequency –8.5nsupto87MHzclockfrequency ◆LBOinputselectsinterleavedorlinearburstmode ◆Self-timedwritecyclewithglobalwritec

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

71V67703S75BQG

256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs,SingleCycleDeselect

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportsfastaccesstimes: –7.5nsupto117MHzclockfrequency –8.0nsupto100MHzclockfrequency –8.5nsupto87MHzclockfrequency ◆LBOinputselectsinterleavedorlinearburstmode ◆Self-timedwritecyclewithglobalwritec

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

71V67703S75BQGI

256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs,SingleCycleDeselect

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportsfastaccesstimes: –7.5nsupto117MHzclockfrequency –8.0nsupto100MHzclockfrequency –8.5nsupto87MHzclockfrequency ◆LBOinputselectsinterleavedorlinearburstmode ◆Self-timedwritecyclewithglobalwritec

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

71V67703S75PFG

256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs,SingleCycleDeselect

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportsfastaccesstimes: –7.5nsupto117MHzclockfrequency –8.0nsupto100MHzclockfrequency –8.5nsupto87MHzclockfrequency ◆LBOinputselectsinterleavedorlinearburstmode ◆Self-timedwritecyclewithglobalwritec

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

71V67703S75PFGI

256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs,SingleCycleDeselect

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportsfastaccesstimes: –7.5nsupto117MHzclockfrequency –8.0nsupto100MHzclockfrequency –8.5nsupto87MHzclockfrequency ◆LBOinputselectsinterleavedorlinearburstmode ◆Self-timedwritecyclewithglobalwritec

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

IDT71V67703S75BG

256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs,SingleCycleDeselect

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT71V67703S75BGI

256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs,SingleCycleDeselect

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT71V67703S75BQ

256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs,SingleCycleDeselect

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT71V67703S75BQI

256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs,SingleCycleDeselect

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT71V67703S75PF

256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs,SingleCycleDeselect

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT71V67703S75PFI

256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs,SingleCycleDeselect

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

产品属性

  • 产品编号:

    71V67703S75BGGI

  • 制造商:

    Renesas Electronics America Inc

  • 类别:

    集成电路(IC) > 存储器

  • 包装:

    托盘

  • 存储器类型:

    易失

  • 存储器格式:

    SRAM

  • 技术:

    SRAM - 同步,SDR

  • 存储容量:

    9Mb(256K x 36)

  • 存储器接口:

    并联

  • 电压 - 供电:

    3.135V ~ 3.465V

  • 工作温度:

    -40°C ~ 85°C(TA)

  • 安装类型:

    表面贴装型

  • 封装/外壳:

    119-BGA

  • 供应商器件封装:

    119-PBGA(14x22)

  • 描述:

    IC SRAM 9MBIT PARALLEL 119PBGA

供应商型号品牌批号封装库存备注价格
RENESAS(瑞萨)/IDT
2022+原装正品
PBGA-119(14x22)
18000
支持工厂BOM表配单 公司只做原装正品货
询价
RENESAS(瑞萨)
23+
119-PBGA (14.00L X 22.00W X 1.
840
全新、原装
询价
IDT, Integrated Device Technol
21+
24-TBGA
5280
进口原装!长期供应!绝对优势价格(诚信经营
询价
IDT, Integrated Device Technol
21+
119-PBGA(14x22)
56200
一级代理/放心采购
询价
IDT
1931+
N/A
1186
加我qq或微信,了解更多详细信息,体验一站式购物
询价
RENESAS(瑞萨)/IDT
2117+
PBGA-119(14x22)
315000
84个/托盘一级代理专营品牌!原装正品,优势现货,长
询价
IDT
20+
BGA-119
168
就找我吧!--邀您体验愉快问购元件!
询价
Renesas
21+
25000
原厂原包 深圳现货 主打品牌 假一赔百 可开票!
询价
IDT
22+
NA
1186
加我QQ或微信咨询更多详细信息,
询价
IDT, Integrated Device Techno
2022+
119-PBGA(14x22)
7300
原装现货
询价
更多71V67703S75BGGI供应商 更新时间2024-5-15 15:00:00