256K X 36, 512K X 18 3.3V Synchronous SRAMs 2.5V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect

Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high system speed: – 166MHz 3.5ns clock access time – 150MHz 3.8ns clock access time – 133MHz 4.2ns clock access time ◆ LBO input selects interleaved or linear burst mode ◆ Self-timed write cycle with global write control (GW)

文件：540.13 Kbytes 页数：24 Pages

RENESAS

瑞萨

256K X 36, 512K X 18 3.3V Synchronous SRAMs 2.5V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect

Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high system speed: – 166MHz 3.5ns clock access time – 150MHz 3.8ns clock access time – 133MHz 4.2ns clock access time ◆ LBO input selects interleaved or linear burst mode ◆ Self-timed write cycle with global write control (GW)

文件：540.13 Kbytes 页数：24 Pages

RENESAS

瑞萨

256K X 36, 512K X 18 3.3V Synchronous SRAMs 2.5V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect

Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high system speed: – 166MHz 3.5ns clock access time – 150MHz 3.8ns clock access time – 133MHz 4.2ns clock access time ◆ LBO input selects interleaved or linear burst mode ◆ Self-timed write cycle with global write control (GW)

文件：540.13 Kbytes 页数：24 Pages

RENESAS

瑞萨

256K X 36, 512K X 18 3.3V Synchronous SRAMs 2.5V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect

Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high system speed: – 166MHz 3.5ns clock access time – 150MHz 3.8ns clock access time – 133MHz 4.2ns clock access time ◆ LBO input selects interleaved or linear burst mode ◆ Self-timed write cycle with global write control (GW)

文件：540.13 Kbytes 页数：24 Pages

RENESAS

瑞萨