首页 >71V67603S150PFGI>规格书列表

零件编号下载&订购功能描述制造商&上传企业LOGO

71V67603S150PFGI

256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighsystemspeed: –166MHz3.5nsclockaccesstime –150MHz3.8nsclockaccesstime –133MHz4.2nsclockaccesstime ◆Self-timedwritecyclewithglobalwritecontrol(GW),byte writeenable(BWE),andbytewrites(BWx) ◆L

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

71V67603S150PFGI

包装:托盘 封装/外壳:100-LQFP 类别:集成电路(IC) 存储器 描述:IC SRAM 9MBIT PARALLEL 100TQFP

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

71V67603S150PFGI8

256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighsystemspeed: –166MHz3.5nsclockaccesstime –150MHz3.8nsclockaccesstime –133MHz4.2nsclockaccesstime ◆Self-timedwritecyclewithglobalwritecontrol(GW),byte writeenable(BWE),andbytewrites(BWx) ◆L

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

71V67603S150PFGI8

包装:托盘 封装/外壳:100-LQFP 类别:集成电路(IC) 存储器 描述:IC SRAM 9MBIT PARALLEL 100TQFP

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

71V67603S150BG

256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighsystemspeed: –166MHz3.5nsclockaccesstime –150MHz3.8nsclockaccesstime –133MHz4.2nsclockaccesstime ◆Self-timedwritecyclewithglobalwritecontrol(GW),byte writeenable(BWE),andbytewrites(BWx) ◆L

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

71V67603S150BGG

256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighsystemspeed: –166MHz3.5nsclockaccesstime –150MHz3.8nsclockaccesstime –133MHz4.2nsclockaccesstime ◆Self-timedwritecyclewithglobalwritecontrol(GW),byte writeenable(BWE),andbytewrites(BWx) ◆L

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

71V67603S150BGGI

256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighsystemspeed: –166MHz3.5nsclockaccesstime –150MHz3.8nsclockaccesstime –133MHz4.2nsclockaccesstime ◆Self-timedwritecyclewithglobalwritecontrol(GW),byte writeenable(BWE),andbytewrites(BWx) ◆L

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

71V67603S150BGI

256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighsystemspeed: –166MHz3.5nsclockaccesstime –150MHz3.8nsclockaccesstime –133MHz4.2nsclockaccesstime ◆Self-timedwritecyclewithglobalwritecontrol(GW),byte writeenable(BWE),andbytewrites(BWx) ◆L

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

71V67603S150BQ

256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighsystemspeed: –166MHz3.5nsclockaccesstime –150MHz3.8nsclockaccesstime –133MHz4.2nsclockaccesstime ◆Self-timedwritecyclewithglobalwritecontrol(GW),byte writeenable(BWE),andbytewrites(BWx) ◆L

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

71V67603S150BQG

256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighsystemspeed: –166MHz3.5nsclockaccesstime –150MHz3.8nsclockaccesstime –133MHz4.2nsclockaccesstime ◆Self-timedwritecyclewithglobalwritecontrol(GW),byte writeenable(BWE),andbytewrites(BWx) ◆L

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

71V67603S150BQI

256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighsystemspeed: –166MHz3.5nsclockaccesstime –150MHz3.8nsclockaccesstime –133MHz4.2nsclockaccesstime ◆Self-timedwritecyclewithglobalwritecontrol(GW),byte writeenable(BWE),andbytewrites(BWx) ◆L

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

71V67603S150PFG

256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighsystemspeed: –166MHz3.5nsclockaccesstime –150MHz3.8nsclockaccesstime –133MHz4.2nsclockaccesstime ◆Self-timedwritecyclewithglobalwritecontrol(GW),byte writeenable(BWE),andbytewrites(BWx) ◆L

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

IDT71V67603S150BGG

256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT71V67603S150BGGI

256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT71V67603S150BQG

256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT71V67603S150BQGI

256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT71V67603S150PFG

256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT71V67603S150PFGI

256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT71V67603S150PFI

256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

产品属性

  • 产品编号:

    71V67603S150PFGI

  • 制造商:

    Renesas Electronics America Inc

  • 类别:

    集成电路(IC) > 存储器

  • 包装:

    托盘

  • 存储器类型:

    易失

  • 存储器格式:

    SRAM

  • 技术:

    SRAM - 同步,SDR

  • 存储容量:

    9Mb(256K x 36)

  • 存储器接口:

    并联

  • 电压 - 供电:

    3.135V ~ 3.465V

  • 工作温度:

    -40°C ~ 85°C(TA)

  • 安装类型:

    表面贴装型

  • 封装/外壳:

    100-LQFP

  • 供应商器件封装:

    100-TQFP(14x14)

  • 描述:

    IC SRAM 9MBIT PARALLEL 100TQFP

供应商型号品牌批号封装库存备注价格
RENESAS(瑞萨)
23+
100-TQFP (20.00L X 14.00W X 0.
720
全新、原装
询价
IDT, Integrated Device Technol
21+
100-TQFP(14x14)
56200
一级代理/放心采购
询价
RENESAS(瑞萨)/IDT
1921+
TQFP-100(14x14)
3575
向鸿仓库现货,优势绝对的原装!
询价
IDT
1931+
N/A
1186
加我qq或微信,了解更多详细信息,体验一站式购物
询价
RENESAS(瑞萨)/IDT
2117+
TQFP-100(14x14)
315000
72个/托盘一级代理专营品牌!原装正品,优势现货,长
询价
IDT
20+
QFP-100
144
就找我吧!--邀您体验愉快问购元件!
询价
Renesas
21+
25000
原厂原包 深圳现货 主打品牌 假一赔百 可开票!
询价
RENESAS(瑞萨)/IDT
2021+
TQFP-100(14x14)
499
询价
IDT
22+
NA
1186
加我QQ或微信咨询更多详细信息,
询价
IDT, Integrated Device Techno
2022+
100-TQFP(14x14)
7300
原装现货
询价
更多71V67603S150PFGI供应商 更新时间2024-4-29 14:00:00