Inverse DIN 41612 Boardmount Socket

文件：33.27 Kbytes 页数：2 Pages

3M

INSTRUMENTATION HANDLES

文件：86.3 Kbytes 页数：1 Pages

KEYSTONE

Keystone Electronics Corp.

5.0V 8K x 8 Asynchronous Static RAM

The 7164 5V CMOS SRAM is organized as 8K x 8. The 7164 offers a reduced power standby mode.The low-power (L) version also offers a battery backup data retention capability at power supply levels as low as 2V. All inputs and outputs of the IDT7164 are TTL-compatible and operation is from a single 5V High-speed address/chip select access time– Military: 20/25/35/45/55/70/85/100ns (max.)– Industrial: 20/25ns (max.)– Commercial: 20/25ns (max.)\nLow power consumption\nBattery backup operation – 2V data retention voltage(L Version only)\nProduced with advanced CMOS high-performancetechnology\nInputs;

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包装：袋 类别：盒子，外壳，机架 盒配件 描述：FERRULE RND HANDLE .312\

Keystone Electronics

包装：袋 类别：盒子，外壳，机架 盒配件 描述：FERRULE RND HANDLE .312\

Keystone Electronics

CMOS Static RAM 64K (8K x 8-Bit)

Features ◆ High-speed address/chip select access time – Commercial: 20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/85/100ns (max.) ◆ Low power consumption ◆ Battery backup operation – 2V data retention voltage (L Version only) ◆ Produced with advanced CMOS high-p

文件：213.71 Kbytes 页数：12 Pages

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CMOS Static RAM 64K (8K x 8-Bit)

Features ◆ High-speed address/chip select access time – Commercial: 20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/85/100ns (max.) ◆ Low power consumption ◆ Battery backup operation – 2V data retention voltage (L Version only) ◆ Produced with advanced CMOS high-p

文件：213.71 Kbytes 页数：12 Pages

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CMOS Static RAM 64K (8K x 8-Bit)

Features ◆ High-speed address/chip select access time – Commercial: 20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/85/100ns (max.) ◆ Low power consumption ◆ Battery backup operation – 2V data retention voltage (L Version only) ◆ Produced with advanced CMOS high-p

文件：213.71 Kbytes 页数：12 Pages

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CMOS Static RAM 64K (8K x 8-Bit)

Features ◆ High-speed address/chip select access time – Commercial: 20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/85/100ns (max.) ◆ Low power consumption ◆ Battery backup operation – 2V data retention voltage (L Version only) ◆ Produced with advanced CMOS high-p

文件：213.71 Kbytes 页数：12 Pages

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CMOS Static RAM 64K (8K x 8-Bit)

Features ◆ High-speed address/chip select access time – Commercial: 20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/85/100ns (max.) ◆ Low power consumption ◆ Battery backup operation – 2V data retention voltage (L Version only) ◆ Produced with advanced CMOS high-p

文件：213.71 Kbytes 页数：12 Pages

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