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7164L

文件：213.71 Kbytes

Page：12 Pages

CMOS Static RAM 64K (8K x 8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

7164L100DB

文件：213.71 Kbytes

Page：12 Pages

CMOS Static RAM 64K (8K x 8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

7164L20DB

文件：213.71 Kbytes

Page：12 Pages

CMOS Static RAM 64K (8K x 8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

7164L20TDB

文件：213.71 Kbytes

Page：12 Pages

CMOS Static RAM 64K (8K x 8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

7164L20YG

文件：213.71 Kbytes

Page：12 Pages

CMOS Static RAM 64K (8K x 8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

7164L20YG8

文件：213.71 Kbytes

Page：12 Pages

CMOS Static RAM 64K (8K x 8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

7164L20YGI

文件：213.71 Kbytes

Page：12 Pages

CMOS Static RAM 64K (8K x 8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

7164L20YGI8

文件：213.71 Kbytes

Page：12 Pages

CMOS Static RAM 64K (8K x 8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

7164L25DB

文件：213.71 Kbytes

Page：12 Pages

CMOS Static RAM 64K (8K x 8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

7164L25TDB

文件：213.71 Kbytes

Page：12 Pages

CMOS Static RAM 64K (8K x 8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

7164L25YG

文件：213.71 Kbytes

Page：12 Pages

CMOS Static RAM 64K (8K x 8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

7164L25YG8

文件：213.71 Kbytes

Page：12 Pages

CMOS Static RAM 64K (8K x 8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

7164L25YGI

文件：213.71 Kbytes

Page：12 Pages

CMOS Static RAM 64K (8K x 8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

7164L25YGI8

文件：213.71 Kbytes

Page：12 Pages

CMOS Static RAM 64K (8K x 8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

7164L35DB

文件：213.71 Kbytes

Page：12 Pages

CMOS Static RAM 64K (8K x 8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

7164L35TDB

文件：213.71 Kbytes

Page：12 Pages

CMOS Static RAM 64K (8K x 8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

7164L45DB

文件：213.71 Kbytes

Page：12 Pages

CMOS Static RAM 64K (8K x 8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

7164L45TDB

文件：213.71 Kbytes

Page：12 Pages

CMOS Static RAM 64K (8K x 8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

7164L55DB

文件：213.71 Kbytes

Page：12 Pages

CMOS Static RAM 64K (8K x 8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

7164L55TDB

文件：213.71 Kbytes

Page：12 Pages

CMOS Static RAM 64K (8K x 8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

详细参数

  • 型号：

    7164L

  • 功能描述：

    静态随机存取存储器

  • RoHS：

    否

  • 制造商：

    Cypress Semiconductor

  • 存储容量：

    16 Mbit

  • 组织：

    1 M x 16

  • 访问时间：

    55 ns

  • 电源电压-最大：

    3.6 V

  • 电源电压-最小：

    2.2 V

  • 最大工作电流：

    22 uA

  • 最大工作温度：

    + 85 C

  • 最小工作温度：

    - 40 C

  • 安装风格：

    SMD/SMT

  • 封装/箱体：

    TSOP-48

  • 封装：

    Tray

供应商型号品牌批号封装库存备注价格
深圳市一线半导体有限公司
7164L25P
IDT
1994
DIP-28
295
询价
深圳市昌和盛利电子有限公司
7164L25P
IDT
23+
DIP-28
9526
询价
深圳市欧立现代科技有限公司
7164L85TDB
IDT
22+
DIP
3500
原装现货,可开13%税票
 询价
深圳市恒创达实业有限公司
7164L70DB
IDT
17+
NA
6200
100%原装正品现货
 询价
深圳中芯器材有限公司
7164L20YG
IDT
RoHSCompliant
Tube
218
neworiginal
 询价
深圳市昊创电子有限公司
7164L35TDB
IDT
1043
DIP
35
全新原装现货-军工IC供应商
 询价
深圳市龙腾翼电子科技有限公司
7164L55DB
2000
368
询价
深圳市纳艾斯科技有限公司
7164L70DB
IDT
2020+
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
 询价
瀚佳科技(深圳)有限公司
7164L20TPG
IDT, Integrated Device Technol
21+
28-PDIP
56200
一级代理/放心采购
 询价
深圳市芯祺盛科技有限公司
7164L25YG8
RENESAS(瑞萨)/IDT
1921+
SOJ-28
3575
向鸿仓库现货,优势绝对的原装!
 询价
更多7164L供应商 更新时间2024-6-12 10:50:00

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