DPDT basic relay

文件：310.99 Kbytes 页数：6 Pages

TELEDYNE

华特力科

Dura Torsion Insert and Power Bits

文件：346.48 Kbytes 页数：1 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Wiha Quality Tools Toll Free: (800) 494-6104

文件：470.28 Kbytes 页数：2 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Capacity (20-hour) 240Ah

文件：549.83 Kbytes 页数：1 Pages

GSYUASABATTERY

丝印：712；Package：WSON(DSG)；BQ2947 Overvoltage Protection for 2-Series to 4-Series Cell Li-Ion Batteries with External Delay Capacitor

1 Features • 2-, 3-, and 4-series cell overvoltage protection • External capacitor-programmed delay timer • Factory programmed OVP threshold (threshold range 3.85 V to 4.6 V) • Output options: active high or open drain active low • High-accuracy overvoltage protection: ±10 mV • Low power c

文件：1.87733 Mbytes 页数：29 Pages

TI

德州仪器

丝印：712；Package：WSON(DSG)；BQ2947 Overvoltage Protection for 2-Series to 4-Series Cell Li-Ion Batteries with External Delay Capacitor

1 Features • 2-, 3-, and 4-series cell overvoltage protection • External capacitor-programmed delay timer • Factory programmed OVP threshold (threshold range 3.85 V to 4.6 V) • Output options: active high or open drain active low • High-accuracy overvoltage protection: ±10 mV • Low power c

文件：1.87733 Mbytes 页数：29 Pages

TI

德州仪器

丝印：712；Package：WSON(DSG)；BQ2947 Overvoltage Protection for 2-Series to 4-Series Cell Li-Ion Batteries with External Delay Capacitor

1 Features • 2-, 3-, and 4-series cell overvoltage protection • External capacitor-programmed delay timer • Factory programmed OVP threshold (threshold range 3.85 V to 4.6 V) • Output options: active high or open drain active low • High-accuracy overvoltage protection: ±10 mV • Low power c

文件：1.87733 Mbytes 页数：29 Pages

TI

德州仪器

丝印：712；Package：SOT-23；Asymmetrical TVS Diode

Features 200W peak pulse power (8/20ps) Ultra low leakage: nA level Operating voltage: 7V or 12V Low clamping voltage Complies with following standards: ~ IEC 61000-4-2 (ESD) immunity test Air discharge: +30kV Contact discharge: $30kV' — IEC61000-4-4 (EFT) 40A (5/50ns) ~ IEC61000-4-5 (Li

文件：1.24583 Mbytes 页数：4 Pages

TECHPUBLIC

台舟电子

丝印：712；Package：SOT-23；N-Channel Enhancement Mode Field Effect Transistor

Description These N-channel enhancement mode field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. They can be used

文件：538.2 Kbytes 页数：14 Pages

FAIRCHILD

仙童半导体

丝印：712；Package：SOT-23；N-Channel Enhancement Mode Field Effect Transistor

Description These N-channel enhancement mode field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. They can be used

文件：116.2 Kbytes 页数：7 Pages

FAIRCHILD

仙童半导体