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70V7519

HIGH-SPEED 3.3V 256K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE

Features: ◆256Kx36SynchronousBank-SwitchableDual-ported SRAMArchitecture –64independent4Kx36banks –9megabitsofmemoryonchip ◆Bankaccesscontrolledviabankaddresspins ◆High-speeddataaccess –Commercial:3.4ns(200MHz)/3.6ns(166MHz)/4.2ns (133MHz)(max.) –Industri

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

70V7519S133BC

HIGH-SPEED 3.3V 256K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE

Features: ◆256Kx36SynchronousBank-SwitchableDual-ported SRAMArchitecture –64independent4Kx36banks –9megabitsofmemoryonchip ◆Bankaccesscontrolledviabankaddresspins ◆High-speeddataaccess –Commercial:3.4ns(200MHz)/3.6ns(166MHz)/4.2ns (133MHz)(max.) –Industri

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

70V7519S133BC8

HIGH-SPEED 3.3V 256K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE

Features: ◆256Kx36SynchronousBank-SwitchableDual-ported SRAMArchitecture –64independent4Kx36banks –9megabitsofmemoryonchip ◆Bankaccesscontrolledviabankaddresspins ◆High-speeddataaccess –Commercial:3.4ns(200MHz)/3.6ns(166MHz)/4.2ns (133MHz)(max.) –Industri

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

70V7519S133BCI

HIGH-SPEED 3.3V 256K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE

Features: ◆256Kx36SynchronousBank-SwitchableDual-ported SRAMArchitecture –64independent4Kx36banks –9megabitsofmemoryonchip ◆Bankaccesscontrolledviabankaddresspins ◆High-speeddataaccess –Commercial:3.4ns(200MHz)/3.6ns(166MHz)/4.2ns (133MHz)(max.) –Industri

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

70V7519S133BCI8

HIGH-SPEED 3.3V 256K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE

Features: ◆256Kx36SynchronousBank-SwitchableDual-ported SRAMArchitecture –64independent4Kx36banks –9megabitsofmemoryonchip ◆Bankaccesscontrolledviabankaddresspins ◆High-speeddataaccess –Commercial:3.4ns(200MHz)/3.6ns(166MHz)/4.2ns (133MHz)(max.) –Industri

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

70V7519S133BF

HIGH-SPEED 3.3V 256K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE

Features: ◆256Kx36SynchronousBank-SwitchableDual-ported SRAMArchitecture –64independent4Kx36banks –9megabitsofmemoryonchip ◆Bankaccesscontrolledviabankaddresspins ◆High-speeddataaccess –Commercial:3.4ns(200MHz)/3.6ns(166MHz)/4.2ns (133MHz)(max.) –Industri

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

70V7519S133BF8

HIGH-SPEED 3.3V 256K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE

Features: ◆256Kx36SynchronousBank-SwitchableDual-ported SRAMArchitecture –64independent4Kx36banks –9megabitsofmemoryonchip ◆Bankaccesscontrolledviabankaddresspins ◆High-speeddataaccess –Commercial:3.4ns(200MHz)/3.6ns(166MHz)/4.2ns (133MHz)(max.) –Industri

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

70V7519S133BFI

HIGH-SPEED 3.3V 256K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE

Features: ◆256Kx36SynchronousBank-SwitchableDual-ported SRAMArchitecture –64independent4Kx36banks –9megabitsofmemoryonchip ◆Bankaccesscontrolledviabankaddresspins ◆High-speeddataaccess –Commercial:3.4ns(200MHz)/3.6ns(166MHz)/4.2ns (133MHz)(max.) –Industri

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

70V7519S133BFI8

HIGH-SPEED 3.3V 256K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE

Features: ◆256Kx36SynchronousBank-SwitchableDual-ported SRAMArchitecture –64independent4Kx36banks –9megabitsofmemoryonchip ◆Bankaccesscontrolledviabankaddresspins ◆High-speeddataaccess –Commercial:3.4ns(200MHz)/3.6ns(166MHz)/4.2ns (133MHz)(max.) –Industri

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

70V7519S166BC

HIGH-SPEED 3.3V 256K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE

Features: ◆256Kx36SynchronousBank-SwitchableDual-ported SRAMArchitecture –64independent4Kx36banks –9megabitsofmemoryonchip ◆Bankaccesscontrolledviabankaddresspins ◆High-speeddataaccess –Commercial:3.4ns(200MHz)/3.6ns(166MHz)/4.2ns (133MHz)(max.) –Industri

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

70V7519S166BC8

HIGH-SPEED 3.3V 256K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE

Features: ◆256Kx36SynchronousBank-SwitchableDual-ported SRAMArchitecture –64independent4Kx36banks –9megabitsofmemoryonchip ◆Bankaccesscontrolledviabankaddresspins ◆High-speeddataaccess –Commercial:3.4ns(200MHz)/3.6ns(166MHz)/4.2ns (133MHz)(max.) –Industri

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

70V7519S166BCI

HIGH-SPEED 3.3V 256K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE

Features: ◆256Kx36SynchronousBank-SwitchableDual-ported SRAMArchitecture –64independent4Kx36banks –9megabitsofmemoryonchip ◆Bankaccesscontrolledviabankaddresspins ◆High-speeddataaccess –Commercial:3.4ns(200MHz)/3.6ns(166MHz)/4.2ns (133MHz)(max.) –Industri

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

70V7519S166BCI8

HIGH-SPEED 3.3V 256K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE

Features: ◆256Kx36SynchronousBank-SwitchableDual-ported SRAMArchitecture –64independent4Kx36banks –9megabitsofmemoryonchip ◆Bankaccesscontrolledviabankaddresspins ◆High-speeddataaccess –Commercial:3.4ns(200MHz)/3.6ns(166MHz)/4.2ns (133MHz)(max.) –Industri

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

70V7519S166BF

HIGH-SPEED 3.3V 256K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE

Features: ◆256Kx36SynchronousBank-SwitchableDual-ported SRAMArchitecture –64independent4Kx36banks –9megabitsofmemoryonchip ◆Bankaccesscontrolledviabankaddresspins ◆High-speeddataaccess –Commercial:3.4ns(200MHz)/3.6ns(166MHz)/4.2ns (133MHz)(max.) –Industri

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

70V7519S166BF8

HIGH-SPEED 3.3V 256K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE

Features: ◆256Kx36SynchronousBank-SwitchableDual-ported SRAMArchitecture –64independent4Kx36banks –9megabitsofmemoryonchip ◆Bankaccesscontrolledviabankaddresspins ◆High-speeddataaccess –Commercial:3.4ns(200MHz)/3.6ns(166MHz)/4.2ns (133MHz)(max.) –Industri

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

70V7519S200BC

HIGH-SPEED 3.3V 256K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE

Features: ◆256Kx36SynchronousBank-SwitchableDual-ported SRAMArchitecture –64independent4Kx36banks –9megabitsofmemoryonchip ◆Bankaccesscontrolledviabankaddresspins ◆High-speeddataaccess –Commercial:3.4ns(200MHz)/3.6ns(166MHz)/4.2ns (133MHz)(max.) –Industri

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

70V7519S200BC8

HIGH-SPEED 3.3V 256K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE

Features: ◆256Kx36SynchronousBank-SwitchableDual-ported SRAMArchitecture –64independent4Kx36banks –9megabitsofmemoryonchip ◆Bankaccesscontrolledviabankaddresspins ◆High-speeddataaccess –Commercial:3.4ns(200MHz)/3.6ns(166MHz)/4.2ns (133MHz)(max.) –Industri

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

70V7519S200BCG

HIGH-SPEED 3.3V 256K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE

Features: ◆256Kx36SynchronousBank-SwitchableDual-ported SRAMArchitecture –64independent4Kx36banks –9megabitsofmemoryonchip ◆Bankaccesscontrolledviabankaddresspins ◆High-speeddataaccess –Commercial:3.4ns(200MHz)/3.6ns(166MHz)/4.2ns (133MHz)(max.) –Industri

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

70V7519S200BCG8

HIGH-SPEED 3.3V 256K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE

Features: ◆256Kx36SynchronousBank-SwitchableDual-ported SRAMArchitecture –64independent4Kx36banks –9megabitsofmemoryonchip ◆Bankaccesscontrolledviabankaddresspins ◆High-speeddataaccess –Commercial:3.4ns(200MHz)/3.6ns(166MHz)/4.2ns (133MHz)(max.) –Industri

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

70V7519S133BC

HIGH-SPEED 3.3V 256K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

详细参数

  • 型号:

    70V7519

  • 功能描述:

    静态随机存取存储器

  • RoHS:

  • 制造商:

    Cypress Semiconductor

  • 存储容量:

    16 Mbit

  • 组织:

    1 M x 16

  • 访问时间:

    55 ns

  • 电源电压-最大:

    3.6 V

  • 电源电压-最小:

    2.2 V

  • 最大工作电流:

    22 uA

  • 最大工作温度:

    + 85 C

  • 最小工作温度:

    - 40 C

  • 安装风格:

    SMD/SMT

  • 封装/箱体:

    TSOP-48

  • 封装:

    Tray

供应商型号品牌批号封装库存备注价格
IDT
122
询价
IDT/RENESAS
22+
BC256, BCG256
24500
瑞萨全系列在售
询价
IDT
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
IDT
23+
BGA
55
原装正品现货
询价
IDT, Integrated Device Technol
21+
119-BGA
5280
进口原装!长期供应!绝对优势价格(诚信经营
询价
IDT, Integrated Device Technol
21+
208-PQFP(28x28)
56200
一级代理/放心采购
询价
RENESAS(瑞萨)/IDT
1921+
CABGA-208(15x15)
3575
向鸿仓库现货,优势绝对的原装!
询价
IDT
1931+
N/A
1186
加我qq或微信,了解更多详细信息,体验一站式购物
询价
RENESAS(瑞萨)/IDT
2117+
CABGA-256(17x17)
315000
6个/托盘一级代理专营品牌!原装正品,优势现货,长期
询价
IDT
20+
BGA-256
12
就找我吧!--邀您体验愉快问购元件!
询价
更多70V7519供应商 更新时间2024-5-13 13:01:00