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70V7519

HIGH-SPEED 3.3V 256K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE

Features: ◆ 256K x 36 Synchronous Bank-Switchable Dual-ported SRAM Architecture – 64 independent 4K x 36 banks – 9 megabits of memory on chip ◆ Bank access controlled via bank address pins ◆ High-speed data access – Commercial: 3.4ns(200MHz)/3.6ns (166MHz)/4.2ns (133MHz) (max.) – Industri

文件:510.64 Kbytes 页数:24 Pages

RENESAS

瑞萨

70V7519

256K x 36 Synchronous Bank-Switchable Dual-Port SRAM

The 70V7519 is a high-speed 256K x 36 (9Mbit) synchronous Bank-Switchable Dual-Ported SRAM is organized into 64 independent 4Kx36 banks and has two independent ports with separate control, address, and I/O pins for each port, allowing each port to access any 4Kx36 memory block not already accessed b Bank access controlled via bank address pins\nSelectable Pipelined or Flow-Through output mode\nCounter enable and repeat features\nDual chip enables allow for depth expansion without additional logic\nFull synchronous operation on both ports\nSeparate byte controls for multiplexed bus and bus match;

Renesas

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70V7519S133BC

HIGH-SPEED 3.3V 256K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE

Features: ◆ 256K x 36 Synchronous Bank-Switchable Dual-ported SRAM Architecture – 64 independent 4K x 36 banks – 9 megabits of memory on chip ◆ Bank access controlled via bank address pins ◆ High-speed data access – Commercial: 3.4ns(200MHz)/3.6ns (166MHz)/4.2ns (133MHz) (max.) – Industri

文件:510.64 Kbytes 页数:24 Pages

RENESAS

瑞萨

70V7519S133BC8

HIGH-SPEED 3.3V 256K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE

Features: ◆ 256K x 36 Synchronous Bank-Switchable Dual-ported SRAM Architecture – 64 independent 4K x 36 banks – 9 megabits of memory on chip ◆ Bank access controlled via bank address pins ◆ High-speed data access – Commercial: 3.4ns(200MHz)/3.6ns (166MHz)/4.2ns (133MHz) (max.) – Industri

文件:510.64 Kbytes 页数:24 Pages

RENESAS

瑞萨

70V7519S133BCI

HIGH-SPEED 3.3V 256K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE

Features: ◆ 256K x 36 Synchronous Bank-Switchable Dual-ported SRAM Architecture – 64 independent 4K x 36 banks – 9 megabits of memory on chip ◆ Bank access controlled via bank address pins ◆ High-speed data access – Commercial: 3.4ns(200MHz)/3.6ns (166MHz)/4.2ns (133MHz) (max.) – Industri

文件:510.64 Kbytes 页数:24 Pages

RENESAS

瑞萨

70V7519S133BCI8

HIGH-SPEED 3.3V 256K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE

Features: ◆ 256K x 36 Synchronous Bank-Switchable Dual-ported SRAM Architecture – 64 independent 4K x 36 banks – 9 megabits of memory on chip ◆ Bank access controlled via bank address pins ◆ High-speed data access – Commercial: 3.4ns(200MHz)/3.6ns (166MHz)/4.2ns (133MHz) (max.) – Industri

文件:510.64 Kbytes 页数:24 Pages

RENESAS

瑞萨

70V7519S133BF

HIGH-SPEED 3.3V 256K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE

Features: ◆ 256K x 36 Synchronous Bank-Switchable Dual-ported SRAM Architecture – 64 independent 4K x 36 banks – 9 megabits of memory on chip ◆ Bank access controlled via bank address pins ◆ High-speed data access – Commercial: 3.4ns(200MHz)/3.6ns (166MHz)/4.2ns (133MHz) (max.) – Industri

文件:510.64 Kbytes 页数:24 Pages

RENESAS

瑞萨

70V7519S133BF8

HIGH-SPEED 3.3V 256K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE

Features: ◆ 256K x 36 Synchronous Bank-Switchable Dual-ported SRAM Architecture – 64 independent 4K x 36 banks – 9 megabits of memory on chip ◆ Bank access controlled via bank address pins ◆ High-speed data access – Commercial: 3.4ns(200MHz)/3.6ns (166MHz)/4.2ns (133MHz) (max.) – Industri

文件:510.64 Kbytes 页数:24 Pages

RENESAS

瑞萨

70V7519S133BFI

HIGH-SPEED 3.3V 256K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE

Features: ◆ 256K x 36 Synchronous Bank-Switchable Dual-ported SRAM Architecture – 64 independent 4K x 36 banks – 9 megabits of memory on chip ◆ Bank access controlled via bank address pins ◆ High-speed data access – Commercial: 3.4ns(200MHz)/3.6ns (166MHz)/4.2ns (133MHz) (max.) – Industri

文件:510.64 Kbytes 页数:24 Pages

RENESAS

瑞萨

70V7519S133BFI8

HIGH-SPEED 3.3V 256K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE

Features: ◆ 256K x 36 Synchronous Bank-Switchable Dual-ported SRAM Architecture – 64 independent 4K x 36 banks – 9 megabits of memory on chip ◆ Bank access controlled via bank address pins ◆ High-speed data access – Commercial: 3.4ns(200MHz)/3.6ns (166MHz)/4.2ns (133MHz) (max.) – Industri

文件:510.64 Kbytes 页数:24 Pages

RENESAS

瑞萨

技术参数

  • Bus Width (bits):

    36

  • Density (Kb):

    9216

  • Pkg. Code:

    BC256

  • Interface:

    Sync

  • I/O Type:

    2.5 V LVTTL

  • I/O Frequency (MHz):

    200

  • Temp. Range:

    -40 to 85°C

  • Architecture:

    BankSwitchable

  • Organization:

    256K x 36

  • Function:

    JTAG

  • Output Type:

    Flowthrough

供应商型号品牌批号封装库存备注价格
IDT
122
询价
IDT/RENESAS
22+
BC256, BCG256
24500
瑞萨全系列在售
询价
IDT, Integrated Device Technol
21+
119-BGA
5280
进口原装!长期供应!绝对优势价格(诚信经营
询价
IDT, Integrated Device Technol
24+
208-PQFP(28x28)
56200
一级代理/放心采购
询价
IDT
1931+
N/A
1186
加我qq或微信,了解更多详细信息,体验一站式购物
询价
RENESAS(瑞萨)/IDT
2447
CABGA-256(17x17)
315000
6个/托盘一级代理专营品牌!原装正品,优势现货,长期
询价
IDT
25+
BGA-256
12
就找我吧!--邀您体验愉快问购元件!
询价
Renesas
25+
25000
原厂原包 深圳现货 主打品牌 假一赔百 可开票!
询价
RENESAS(瑞萨)/IDT
2021+
CABGA-256(17x17)
499
询价
IDT
22+
NA
1186
加我QQ或微信咨询更多详细信息,
询价
更多70V7519供应商 更新时间2025-12-1 13:01:00