70T633S10BCG技术资料参数市场行情集成器-114ic电子网

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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
70T633S10BCG	文件：437.45 Kbytes Page：27 Pages	HIGH-SPEED 2.5V 512/256K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM	IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司	IDT
70T633S10BCG	文件：251.71 Kbytes Page：27 Pages	ASYNCHRONOUS DUAL-PORT STATIC RAM	IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司	IDT
70T633S10BCGI	文件：513.809 Kbytes Page：28 Pages	HIGH-SPEED 2.5V 512/256K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:10/12ns(max.) ◆RapidWriteModesimplifieshigh-speedconsecutivewrite cycles ◆Dualchipenablesallowfordepthexpansion	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
70T633S10BCG8	文件：437.45 Kbytes Page：27 Pages	HIGH-SPEED 2.5V 512/256K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM	IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司	IDT
70T633S10BCG8	文件：251.71 Kbytes Page：27 Pages	ASYNCHRONOUS DUAL-PORT STATIC RAM	IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司	IDT
70T633S10BCGI	文件：437.45 Kbytes Page：27 Pages	HIGH-SPEED 2.5V 512/256K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM	IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司	IDT
70T633S10BCGI	文件：251.71 Kbytes Page：27 Pages	ASYNCHRONOUS DUAL-PORT STATIC RAM	IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司	IDT
70T633S10BCGI8	文件：437.45 Kbytes Page：27 Pages	HIGH-SPEED 2.5V 512/256K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM	IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司	IDT
70T633S10BCGI8	文件：251.71 Kbytes Page：27 Pages	ASYNCHRONOUS DUAL-PORT STATIC RAM	IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司	IDT
70T633S10BCGI	文件：100 bytes Page：1 Pages	包装：托盘封装/外壳：256-LBGA 类别：集成电路（IC）存储器描述：IC SRAM 9MBIT PARALLEL 256CABGA	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
70T633S10BC	文件：513.809 Kbytes Page：28 Pages	HIGH-SPEED2.5V512/256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3V0R2.5VINTERFACE Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:10/12ns(max.) ◆RapidWriteModesimplifieshigh-speedconsecutivewrite cycles ◆Dualchipenablesallowfordepthexpansion	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
70T633S10BCI	文件：513.809 Kbytes Page：28 Pages	HIGH-SPEED2.5V512/256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3V0R2.5VINTERFACE Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:10/12ns(max.) ◆RapidWriteModesimplifieshigh-speedconsecutivewrite cycles ◆Dualchipenablesallowfordepthexpansion	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
70T633S10BF	文件：513.809 Kbytes Page：28 Pages	HIGH-SPEED2.5V512/256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3V0R2.5VINTERFACE Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:10/12ns(max.) ◆RapidWriteModesimplifieshigh-speedconsecutivewrite cycles ◆Dualchipenablesallowfordepthexpansion	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
70T633S10BFG	文件：251.71 Kbytes Page：27 Pages	ASYNCHRONOUSDUAL-PORTSTATICRAM	IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司	IDT
70T633S10BFG	文件：437.45 Kbytes Page：27 Pages	HIGH-SPEED2.5V512/256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAM	IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司	IDT
70T633S10BFG	文件：513.809 Kbytes Page：28 Pages	HIGH-SPEED2.5V512/256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3V0R2.5VINTERFACE Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:10/12ns(max.) ◆RapidWriteModesimplifieshigh-speedconsecutivewrite cycles ◆Dualchipenablesallowfordepthexpansion	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
70T633S10BFGI	文件：513.809 Kbytes Page：28 Pages	HIGH-SPEED2.5V512/256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3V0R2.5VINTERFACE Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:10/12ns(max.) ◆RapidWriteModesimplifieshigh-speedconsecutivewrite cycles ◆Dualchipenablesallowfordepthexpansion	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
70T633S10BFGI	文件：437.45 Kbytes Page：27 Pages	HIGH-SPEED2.5V512/256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAM	IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司	IDT
70T633S10BFGI	文件：251.71 Kbytes Page：27 Pages	ASYNCHRONOUSDUAL-PORTSTATICRAM	IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司	IDT
70T633S10BFI	文件：513.809 Kbytes Page：28 Pages	HIGH-SPEED2.5V512/256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3V0R2.5VINTERFACE Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:10/12ns(max.) ◆RapidWriteModesimplifieshigh-speedconsecutivewrite cycles ◆Dualchipenablesallowfordepthexpansion	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS

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供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市斌腾达科技有限公司	70T633S10BCGI	IDT, Integrated Device Technol	21+	208-LFBGA	5280	进口原装!长期供应!绝对优势价格(诚信经营	询价
瀚佳科技(深圳)有限公司	70T633S10BCGI	IDT, Integrated Device Technol	21+	256-CABGA(17x17)	56200	一级代理/放心采购	询价
深圳市艾宇欣科技有限公司	70T633S10BCGI	IDT	1931+	N/A	1186	加我qq或微信，了解更多详细信息,体验一站式购物	询价
艾睿国际（香港）有限公司	70T633S10BCGI	RENESAS(瑞萨)/IDT	2117+	CABGA-256(17x17)	315000	6个/托盘一级代理专营品牌!原装正品,优势现货,长期	询价
深圳市科雨电子有限公司	70T633S10BCGI	IDT	20+	BGA-256	12	就找我吧!--邀您体验愉快问购元件!	询价
深圳市冠亿通科技有限公司	70T633S10BCGI	Renesas	21+		25000	原厂原包深圳现货主打品牌假一赔百可开票!	询价
讯运(深圳/上海)电子有限公司	70T633S10BCGI	RENESAS(瑞萨)/IDT	2021+	CABGA-256(17x17)	499		询价
万三科技(深圳)有限公司	70T633S10BCGI	RENESAS(瑞萨电子)	22+	NA	500000	万三科技,秉承原装,购芯无忧	询价
深圳市易讯博科技有限公司	70T633S10BCGI	IDT	22+	NA	1186	加我QQ或微信咨询更多详细信息,	询价
深圳市大联智电子有限公司	70T633S10BCGI	IDT, Integrated Device Techno	2022+	256-CABGA(17x17)	7300	原装现货	询价

更多70T633S10BCG供应商更新时间2024-5-14 13:01:00

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