70T651S10BCG数据手册原装现货集成器IDT-114ic电子网

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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
70T651S10BCG	文件：739.07 Kbytes Page：28 Pages	HIGH-SPEED 2.5V 256/128K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM	IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司	IDT
70T651S10BCG	文件：266.34 Kbytes Page：28 Pages	HIGH-SPEED ASYNCHRONOUS DUAL-PORT STATIC RAM	IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司	IDT
70T651S10BCG8	文件：739.07 Kbytes Page：28 Pages	HIGH-SPEED 2.5V 256/128K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM	IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司	IDT
70T651S10BCG8	文件：266.34 Kbytes Page：28 Pages	HIGH-SPEED ASYNCHRONOUS DUAL-PORT STATIC RAM	IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司	IDT
70T651S10BCGI	文件：739.07 Kbytes Page：28 Pages	HIGH-SPEED 2.5V 256/128K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM	IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司	IDT
70T651S10BCGI	文件：266.34 Kbytes Page：28 Pages	HIGH-SPEED ASYNCHRONOUS DUAL-PORT STATIC RAM	IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司	IDT
70T651S10BCGI8	文件：739.07 Kbytes Page：28 Pages	HIGH-SPEED 2.5V 256/128K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM	IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司	IDT
70T651S10BCGI8	文件：266.34 Kbytes Page：28 Pages	HIGH-SPEED ASYNCHRONOUS DUAL-PORT STATIC RAM	IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司	IDT
70T651S10BC	文件：431.37 Kbytes Page：29 Pages	HIGH-SPEED2.5V256/128Kx36ASYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3V0R2.5VINTERFACE Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:10/12ns(max.) ◆RapidWriteModesimplifieshigh-speedconsecutivewrite cycles ◆Dualchipenablesallowfordepthexpansion	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
70T651S10BCI	文件：431.37 Kbytes Page：29 Pages	HIGH-SPEED2.5V256/128Kx36ASYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3V0R2.5VINTERFACE Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:10/12ns(max.) ◆RapidWriteModesimplifieshigh-speedconsecutivewrite cycles ◆Dualchipenablesallowfordepthexpansion	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
70T651S10BF	文件：431.37 Kbytes Page：29 Pages	HIGH-SPEED2.5V256/128Kx36ASYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3V0R2.5VINTERFACE Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:10/12ns(max.) ◆RapidWriteModesimplifieshigh-speedconsecutivewrite cycles ◆Dualchipenablesallowfordepthexpansion	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
70T651S10BFG	文件：431.37 Kbytes Page：29 Pages	HIGH-SPEED2.5V256/128Kx36ASYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3V0R2.5VINTERFACE Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:10/12ns(max.) ◆RapidWriteModesimplifieshigh-speedconsecutivewrite cycles ◆Dualchipenablesallowfordepthexpansion	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
70T651S10BFG	文件：266.34 Kbytes Page：28 Pages	HIGH-SPEEDASYNCHRONOUSDUAL-PORTSTATICRAM	IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司	IDT
70T651S10BFG	文件：739.07 Kbytes Page：28 Pages	HIGH-SPEED2.5V256/128Kx36ASYNCHRONOUSDUAL-PORTSTATICRAM	IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司	IDT
70T651S10BFGI	文件：266.34 Kbytes Page：28 Pages	HIGH-SPEEDASYNCHRONOUSDUAL-PORTSTATICRAM	IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司	IDT
70T651S10BFGI	文件：431.37 Kbytes Page：29 Pages	HIGH-SPEED2.5V256/128Kx36ASYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3V0R2.5VINTERFACE Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:10/12ns(max.) ◆RapidWriteModesimplifieshigh-speedconsecutivewrite cycles ◆Dualchipenablesallowfordepthexpansion	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
70T651S10BFGI	文件：739.07 Kbytes Page：28 Pages	HIGH-SPEED2.5V256/128Kx36ASYNCHRONOUSDUAL-PORTSTATICRAM	IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司	IDT
70T651S10BFI	文件：431.37 Kbytes Page：29 Pages	HIGH-SPEED2.5V256/128Kx36ASYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3V0R2.5VINTERFACE Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:10/12ns(max.) ◆RapidWriteModesimplifieshigh-speedconsecutivewrite cycles ◆Dualchipenablesallowfordepthexpansion	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
70T651S10DRG	文件：739.07 Kbytes Page：28 Pages	HIGH-SPEED2.5V256/128Kx36ASYNCHRONOUSDUAL-PORTSTATICRAM	IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司	IDT
70T651S10DRG	文件：266.34 Kbytes Page：28 Pages	HIGH-SPEEDASYNCHRONOUSDUAL-PORTSTATICRAM	IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司	IDT

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供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市斌腾达科技有限公司	70T651S10BCI	IDT, Integrated Device Technol	21+	256-LBGA	5280	进口原装!长期供应!绝对优势价格(诚信经营	询价
瀚佳科技(深圳)有限公司	70T651S10BCI	IDT, Integrated Device Technol	21+	256-CABGA(17x17)	56200	一级代理/放心采购	询价
深圳市芯祺盛科技有限公司	70T651S10BCI	RENESAS(瑞萨)/IDT	1921+	CABGA-256(17x17)	3575	向鸿仓库现货,优势绝对的原装!	询价
深圳市艾宇欣科技有限公司	70T651S10BCI	IDT	1931+	N/A	1186	加我qq或微信，了解更多详细信息,体验一站式购物	询价
艾睿国际（香港）有限公司	70T651S10BCI	RENESAS(瑞萨)/IDT	2117+	CABGA-256(17x17)	315000	6个/托盘一级代理专营品牌!原装正品,优势现货,长期	询价
深圳市科雨电子有限公司	70T651S10BCI	IDT	20+	BGA-256	12	就找我吧!--邀您体验愉快问购元件!	询价
讯运(深圳/上海)电子有限公司	70T651S10BCI	RENESAS(瑞萨)/IDT	2021+	CABGA-256(17x17)	499		询价
万三科技(深圳)有限公司	70T651S10BCI	RENESAS(瑞萨电子)	22+	NA	500000	万三科技,秉承原装,购芯无忧	询价
深圳市易讯博科技有限公司	70T651S10BCI	IDT	22+	NA	1186	加我QQ或微信咨询更多详细信息,	询价
深圳市大联智电子有限公司	70T651S10BCI	Renesas Electronics America In	2022+	256-LBGA	6680	原厂原装，欢迎咨询	询价

更多70T651S10BCG供应商更新时间2024-5-17 13:02:00

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