HiPerFETTM Power MOSFETs

N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Features • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect • Fast

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IXYS

艾赛斯

N-Channel Power MOSFET

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av

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FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

isc N-Channel MOSFET Transistor

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ISC

无锡固电

N-Channel Power MOSFET

Features • 44A, 150V, RDS(on) = 0.028Ω @VGS = 10 V • Low gate charge ( typical 135 nC) • Low Crss ( typical 135 pF) • Fast switching • 100 avalanche tested • Improved dv/dt capability • 175°C maximum junction temperature rating

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FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司