70N10DSL规格书应用电路批发采购平伟-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
70N10DSL	文件：300 bytes Page：1 Pages	Mosfet	PINGWEI 平伟	PINGWEI
CEB70N10L	文件：533.29 Kbytes Page：5 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 69A, RDS(ON) = 11mW @VGS = 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RoHS compliant. RDS(ON) = 15mW @VGS = 4.5V 文件：533.29 Kbytes 页数：5 Pages	CET-MOS 华瑞	CET-MOS
CEP70N10L	文件：533.29 Kbytes Page：5 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 69A, RDS(ON) = 11mW @VGS = 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RoHS compliant. RDS(ON) = 15mW @VGS = 4.5V 文件：533.29 Kbytes 页数：5 Pages	CET-MOS 华瑞	CET-MOS
FQA70N10	文件：637.49 Kbytes Page：8 Pages	100V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs 文件：637.49 Kbytes 页数：8 Pages	FAIRCHILD 仙童半导体	FAIRCHILD

更多70N10DSL供应商更新时间2026-1-17 11:44:00