KSM6N65

AdvancedhighcelldenitytrenchtechnologyforultraRDS(ON)

KSMB6N65

Greendeviceavailable.

KSMF6N65

Lowgatecharge.

MD6N65

LightningSurgeProtectorsforElectronicsEquipmentM-RESTER

MDF6N65B

N-ChannelMOSFET650V,6.0A,1.45ohm

MDI6N65B

N-ChannelMOSFET650V,5.7A,1.45(ohm)

MDI6N65BTH

N-ChannelMOSFET650V,5.7A,1.45(ohm)

MDI6N65BTH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=5.7A@TC=25℃ ·DrainSourceVoltage :VDSS=650V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.45Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

MPCF6N65A

ZeroReverseRecoveryCurrent

Features ZeroReverseRecoveryCurrent ZeroForwardRecoveryVoltage Temperature-independentSwitchingBehavior PositiveTemperatureCoefficientonVF High-speedswitchingpossible Highsurgecurrentcapability Applications SwitchModePowerSupply(SMPS) MotorDrives Power

MSF6N65

N-ChannelEnhancementModePowerMOSFET