型号：RMP6N65IP；Package：TO-251；N-CHANNEL ENHANCEMENT MODE MOSFET

FEATURES • Low Crss • Low gate charge • Fast switching • Improved ESD capability • Improved dv/dt capability • 100% avalanche energy test

文件：1.37016 Mbytes 页数：11 Pages

RECTRON

型号：RMP6N65LD；Package：TO-252；N-CHANNEL ENHANCEMENT MODE MOSFET

FEATURES • Low Crss • Low gate charge • Fast switching • Improved ESD capability • Improved dv/dt capability • 100% avalanche energy test

文件：1.37016 Mbytes 页数：11 Pages

RECTRON

型号：RMP6N65T2；Package：TO-220；N-CHANNEL ENHANCEMENT MODE MOSFET

FEATURES • Low Crss • Low gate charge • Fast switching • Improved ESD capability • Improved dv/dt capability • 100% avalanche energy test

文件：1.37016 Mbytes 页数：11 Pages

RECTRON

型号：RMP6N65TI；Package：TO-220F；N-CHANNEL ENHANCEMENT MODE MOSFET

FEATURES • Low Crss • Low gate charge • Fast switching • Improved ESD capability • Improved dv/dt capability • 100% avalanche energy test

文件：1.37016 Mbytes 页数：11 Pages

RECTRON

型号：STF6N65K3；Package：TO-220FP；N-channel 650 V, 1.1 ohm typ., 5.4 A SuperMESH3 Power MOSFET in TO-220FP, I PAKFP, IPAK

文件：906.85 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

型号：STFI6N65K3；Package：IPAKFP；N-channel 650 V, 1.1 ohm typ., 5.4 A SuperMESH3 Power MOSFET in TO-220FP, I PAKFP, IPAK

文件：906.85 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

型号：STU6N65K3；Package：IPAK；N-channel 650 V, 1.1 ohm typ., 5.4 A SuperMESH3 Power MOSFET in TO-220FP, I PAKFP, IPAK

文件：906.85 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

型号：YFW6N65A1；Package：TO-220AB；6A 650V N-channel enhancement mode field effect transistor

文件：1.10231 Mbytes 页数：7 Pages

YFWDIODE

佑风微电子

型号：YFW6N65A2；Package：TO-220F；6A 650V N-channel enhancement mode field effect transistor

文件：1.10231 Mbytes 页数：7 Pages

YFWDIODE

佑风微电子

型号：YFW6N65A3；Package：TO-263；6A 650V N-channel enhancement mode field effect transistor

文件：1.10231 Mbytes 页数：7 Pages

YFWDIODE

佑风微电子