丝印：6D0N；Package：WDFNW6；MOSFET - Power, Single N-Channel 40 V, 5 m, 68 A

Features • Small Footprint for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：163.51 Kbytes 页数：7 Pages

ONSEMI

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丝印：6D0N15MC；Package：DFNW8；MOSFET ??Power, Single N-Channel, DFNW8 150 V, 6.4 m, 135 A

文件：334.09 Kbytes 页数：8 Pages

ONSEMI

安森美半导体