丝印：6D2N8W；Package：DFNW5；MOSFET - Power, Single N-Channel, STD Gate, SO8FL 80 V, 6.2 m, 71 A

Features • Low QRR, Soft Recovery Body Diode • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • Synchronous Rectificat

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