丝印：6706；Package：SOP-8Dual；N and P Channel Enhancement Mode Power MOSFET

Description The 6706A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.13936 Mbytes 页数：10 Pages

GOFORD

谷峰半导体

丝印：6706；Package：SOP-8Dual；N and P Channel Enhancement Mode Power MOSFET

Description The 6706AA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：1.37009 Mbytes 页数：10 Pages

GOFORD

谷峰半导体

Trench Mosfet

GOFORD

谷峰半导体

32K x 8 Bit Static Random Access Memory

The MCM6706AR is a 262,144 bit static random access memory organized as 32,768 words of 8 bits, fabricated using high performance silicon–gate BiCMOS technology. Static design eliminates the need for external clocks or timing strobes. Output enable (G) is a special control feature that provides i

文件：152.63 Kbytes 页数：8 Pages

MOTOROLA

摩托罗拉

32K x 8 Bit Static Random Access Memory

32K x 8 Bit Static Random Access Memory The MCM6706B is a 262,144 bit static random access memory organized as 32,768 words of 8 bits. Static design eliminates the need for external clocks or timing strobes. Output enable (G) is a special control feature that provides increased system flexibilit

文件：102.66 Kbytes 页数：7 Pages

MOTOROLA

摩托罗拉

32K x 8 Bit Static Random Access Memory

The MCM6706BR is a 262,144 bit static random access memory organized as 32,768 words of 8 bits. Static design eliminates the need for external clocks or timing strobes. • Single 5.0 V ± 10 Power Supply • Fully Static — No Clock or Timing Strobes Necessary • All Inputs and Outputs Are TTL Compat

文件：114.87 Kbytes 页数：7 Pages

MOTOROLA

摩托罗拉