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65C6190

Extremely low losses due to very low FOM Rdson*Qg and Eoss

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered de

文件:2.21772 Mbytes 页数:19 Pages

INFINEON

英飞凌

IPA65R190C6

丝印:65C6190;Package:PG-TO220FullPAK;Extremely low losses due to very low FOM Rdson*Qg and Eoss

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered de

文件:2.21772 Mbytes 页数:19 Pages

INFINEON

英飞凌

IPB65R190C6

丝印:65C6190;Package:PG-TO263;Extremely low losses due to very low FOM Rdson*Qg and Eoss

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered de

文件:2.21772 Mbytes 页数:19 Pages

INFINEON

英飞凌

IPI65R190C6

丝印:65C6190;Package:PG-TO262;Extremely low losses due to very low FOM Rdson*Qg and Eoss

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered de

文件:2.21772 Mbytes 页数:19 Pages

INFINEON

英飞凌

IPP65R190C6

丝印:65C6190;Package:PG-TO220;Extremely low losses due to very low FOM Rdson*Qg and Eoss

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered de

文件:2.21772 Mbytes 页数:19 Pages

INFINEON

英飞凌

IPW65R190C6

丝印:65C6190;Package:PG-TO247;Extremely low losses due to very low FOM Rdson*Qg and Eoss

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered de

文件:2.21772 Mbytes 页数:19 Pages

INFINEON

英飞凌

供应商型号品牌批号封装库存备注价格
CMOS/场效应半导体
23+
TO-252
69820
终端可以免费供样,支持BOM配单!
询价
Infineon/英飞凌
22+
TO-220
6000
十年配单,只做原装
询价
INFINEON
22+
TO-220
25000
只做原装进口现货,专注配单
询价
INFINEON
23+
TO263
8000
只做原装现货
询价
INFINEON
23+
TO263
7000
询价
infineon/
TO-262
22+
8000
终端免费提供样品 可开13%增值税发票
询价
INFINEON
25+
TO-TO-220
12300
独立分销商 公司只做原装 诚心经营 免费试样正品保证
询价
INFINEON/英飞凌
24+
TO263
27950
郑重承诺只做原装进口现货
询价
INFINEON/英飞凌
2450+
TO263
8850
只做原装正品假一赔十为客户做到零风险!!
询价
17
23+
TO-252
5000
原厂授权代理,海外优势订货渠道。可提供大量库存,详
询价
更多65C6190供应商 更新时间2026-1-24 17:55:00