丝印：65A040F7；Package：PG-HDSOP-22；MOSFET 650V CoolMOSª CFD7A SJ Power Device

Features • Latest 650V automotive qualified technology with integrated fast body diode on the market featuring ultra low Qrr • Lowest FOM RDS(on)*Qg and RDS(on)*Eoss • 100% avalanche tested • Best-in-class RDS(on) in SMD and THD packages Benefits • Lower switching losses enabling high

文件：1.41929 Mbytes 页数：14 Pages

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丝印：65A060F7；Package：PG-HDSOP-22；MOSFET 650V CoolMOSª CFD7A SJ Power Device

Features • Latest 650V automotive qualified technology with integrated fast body diode on the market featuring ultra low Qrr • Lowest FOM RDS(on)*Qg and RDS(on)*Eoss • 100% avalanche tested • Best-in-class RDS(on) in SMD and THD packages Benefits • Lower switching losses enabling high

文件：1.40208 Mbytes 页数：14 Pages

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丝印：65A080F7；Package：PG-HDSOP-22；MOSFET 650V CoolMOSª CFD7A SJ Power Device

Features • Latest 650V automotive qualified technology with integrated fast body diode on the market featuring ultra low Qrr • Lowest FOM RDS(on)*Qg and RDS(on)*Eoss • 100% avalanche tested • Best-in-class RDS(on) in SMD and THD packages Benefits • Lower switching losses enabling high

文件：1.404 Mbytes 页数：14 Pages

Infineon

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丝印：65A099F7；Package：PG-HDSOP-22；MOSFET 650V CoolMOSª CFD7A SJ Power Device

Features • Latest 650V automotive qualified technology with integrated fast body diode on the market featuring ultra low Qrr • Lowest FOM RDS(on)*Qg and RDS(on)*Eoss • 100% avalanche tested • Best-in-class RDS(on) in SMD and THD packages Benefits • Lower switching losses enabling high

文件：1.48002 Mbytes 页数：14 Pages

Infineon

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丝印：65A125F7；Package：PG-HDSOP-22；MOSFET 650V CoolMOSª CFD7A SJ Power Device

Features • Latest 650V automotive qualified technology with integrated fast body diode on the market featuring ultra low Qrr • Lowest FOM RDS(on)*Qg and RDS(on)*Eoss • 100% avalanche tested • Best-in-class RDS(on) in SMD and THD packages Benefits • Lower switching losses enabling high

文件：1.49703 Mbytes 页数：14 Pages

Infineon

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丝印：65A190F7；Package：PG-TO220-3；650V CoolMOSª CFD7A SJ Power Device

Features • Latest 650V automotive qualified technology with integrated fast body diode on the market featuring ultra low Qrr • Lowest FOM RDS(on)*Qg and RDS(on)*Eoss • 100 avalanche tested • Best-in-class RDS(on) in SMD and THD packages

文件：1.73828 Mbytes 页数：14 Pages

Infineon

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丝印：65A017F7；Package：PG-HDSOP-22；MOSFET 650V CoolMOSª CFD7A SJ Power Device

Features • Latest 650V automotive qualified technology with integrated fast body diode on the market featuring ultra low Qrr • Lowest FOM RDS(on)*Qg and RDS(on)*Eoss • 100% avalanche tested • Best-in-class RDS(on) in SMD and THD packages Benefits • Lower switching losses enabling high

文件：1.51245 Mbytes 页数：14 Pages

Infineon

英飞凌

丝印：65A040F7；Package：PG-HDSOP-22；MOSFET 650V CoolMOSª CFD7A SJ Power Device

Features • Latest 650V automotive qualified technology with integrated fast body diode on the market featuring ultra low Qrr • Lowest FOM RDS(on)*Qg and RDS(on)*Eoss • 100% avalanche tested • Best-in-class RDS(on) in SMD and THD packages Benefits • Lower switching losses enabling high

文件：1.52921 Mbytes 页数：14 Pages

Infineon

英飞凌

丝印：65A125F7；Package：PG-HDSOP-22；MOSFET 650V CoolMOSª CFD7A SJ Power Device

Features • Latest 650V automotive qualified technology with integrated fast body diode on the market featuring ultra low Qrr • Lowest FOM RDS(on)*Qg and RDS(on)*Eoss • 100% avalanche tested • Best-in-class RDS(on) in SMD and THD packages Benefits • Lower switching losses enabling high

文件：1.52275 Mbytes 页数：14 Pages

Infineon

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丝印：65A190F7；Package：PG-TO247-3；650V CoolMOS짧 CFD7A SJ Power Device

MOSFET 650V CoolMOS™ CFD7A SJ Power Device 650V CoolMOS™ CFD7A is Infineons latest generation of market leading automotive qualified high voltage CoolMOS™ MOSFETs. Potential applications Suitable for PFC and DC-DC stages for: • Unidriectional and bidirectional DC-DC converters, • On-Board ba

文件：1.52198 Mbytes 页数：14 Pages

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