丝印：65A017F7；Package：PG-HDSOP-22；MOSFET 650V CoolMOSª CFD7A SJ Power Device

Features • Latest 650V automotive qualified technology with integrated fast body diode on the market featuring ultra low Qrr • Lowest FOM RDS(on)*Qg and RDS(on)*Eoss • 100% avalanche tested • Best-in-class RDS(on) in SMD and THD packages Benefits • Lower switching losses enabling high

文件：1.51245 Mbytes 页数：14 Pages

Infineon

英飞凌

650 V CoolMOS ™ CFD7A N 通道汽车 SJ 功率 MOSFET，采用 HDSOP-22 底部冷却

\n优势:\n• Better utilization of PCB space\n• Highest reliability for automotive appl.\n• Optimized power loop\n• Decoupling of thermals from substrate\n• Enabling of higher power density designs\n• Scalable for use in PFC and DC-DC stage\n• Granular portfolio available;

Infineon

英飞凌

650V CoolMOSª CFD7 SJ Power Device

Features • Ultra-fast body diode • 650V break down voltage • Best-in-class RDS(on) • Reduced switching losses • Low RDS(on) dependency over temperature Benefits • Excellent hard commutation ruggedness • Extra safety margin for designs with increased bus voltage • Enabling increased powe

文件：1.27133 Mbytes 页数：14 Pages

Infineon

英飞凌

MOSFET 650V CoolMOSª CFD7A SJ Power Device

Features • Latest 650V automotive qualified technology with integrated fast body diode on the market featuring ultra low Qrr • Lowest FOM RDS(on)*Qg and RDS(on)*Eoss • 100% avalanche tested • Best-in-class RDS(on) in SMD and THD packages Benefits • Lower switching losses enabling high

文件：1.40444 Mbytes 页数：14 Pages

Infineon

英飞凌