N-Channel 6 0-V (D-S) MOSFET

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丝印：640N65EC；Package：ITO-220AB-F；650VN-ChannelSuperJunctionMOSFET

Feature: • RDS(ON) Max, VGS@10V: 640m2 • Easy to use/ drive • High Speed Switching and Low RDS(ON) • 100 Avalanche Tested • 100 Rg Tested Lead free in compliance with EU RoHS 2.0 • Green molding compound as per IEC 61249 standard Mechanical Data Case: ITO-220AB-F package • Terminals: Sol

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PANJIT

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丝印：640N65EC；Package：TO-220AB-L；650V N-Channel Super Junction MOSFET

Feature:  RDS(ON) Max, VGS@10V: 640mΩ  Easy to use/ drive  High Speed Switching and Low RDS(ON)  100 Avalanche Tested  100 Rg Tested  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249 standard Mechanical Data  Case: TO-220AB-L package  Terminals:

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PANJIT

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High Current Transistors

High Current Transistors PNP Silicon

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High Current Transistors(PNP Silicon)

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ONSEMI

安森美半导体

SWITCHMODE??Power Rectifirers DPAK Surface Mount Package

SCHOTTKY BARRIER RECTIFIERS 6 AMPERES 20 TO 60 VOLTS . . . in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Extremely Fast Switching • Extremely Low Forward Drop • Platinum Barrier with Avalanche Guardrings • Gua

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MOTOROLA

摩托罗拉