丝印：62L；Package：Lead-freeFlipChip；3 W filter-free class D audio power amplifier

Features · Operating from VCC = 2.4 V to 5.5 V · Standby mode active low · Output power: 3 W into 4 Ω and 1.75 W into 8 Ω with 10% THD+N max. and 5 V power supply · Output power: 2.3 W @5 V or 0.75 W @ 3.0 V into 4 Ω with 1% THD+N max. · Output power: 1.4 W @5 V or 0.45 W @ 3.0 V i

文件：1.31906 Mbytes 页数：41 Pages

STMICROELECTRONICS

意法半导体

丝印：62L；Package：Lead-freeFlipChip；3 W filter-free class D audio power amplifier

Features · Operating from VCC = 2.4 V to 5.5 V · Standby mode active low · Output power: 3 W into 4 Ω and 1.75 W into 8 Ω with 10% THD+N max. and 5 V power supply · Output power: 2.3 W @5 V or 0.75 W @ 3.0 V into 4 Ω with 1% THD+N max. · Output power: 1.4 W @5 V or 0.45 W @ 3.0 V i

文件：1.31906 Mbytes 页数：41 Pages

STMICROELECTRONICS

意法半导体

丝印：62L；Package：WQFN12；Electronic Fuse, 3 to 12 V

文件：164.43 Kbytes 页数：11 Pages

ONSEMI

安森美半导体

32K x 8 LOW VOLTAGE STATIC RAM

DESCRIPTION The ISSI IS62LV256 is a very high-speed, low power, 32,768-word by 8-bit static RAM. It is fabricated using ISSIs high-performance CMOS double-metal technology. FEATURES • Access time: 45, 70 ns • Low active power: 70 mW • Low standby power — 45 µW CMOS standby • Fully stati

文件：40.95 Kbytes 页数：9 Pages

ISSI

矽成半导体

Very Low Power/Voltage CMOS SRAM 128K X 8 bit

文件：383.06 Kbytes 页数：11 Pages

BSI

连邦科技

128K x 16 CMOS STATIC RAM

文件：83.15 Kbytes 页数：9 Pages

ISSI

矽成半导体

Very Low Power/Voltage CMOS SRAM 128K X 8 bit

文件：383.06 Kbytes 页数：11 Pages

BSI

连邦科技