60A, 600V   N-CHANNEL SUPER-JUNCTION MOSFET

The UTC 60NM60 is a Super Junction MOSFET Structure and isdesigned to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used atDC-DC, AC-DC converters for power applications. • RDS(ON) < 65 mΩ @ VGS=10V, ID=30A \n• 100% Avalanche Tested;

UTC

友顺

isc N-Channel MOSFET Transistor

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ISC

无锡固电

N-CHANNEL 600V - 0.050ohm - 60A Max247 Zener-Protected MDmesh?줡ower MOSFET

DESCRIPTION The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of

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STMICROELECTRONICS

意法半导体

TO-247

INFINEON/英飞凌

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