60N321

Insulated Gate Bipolar Transistor Silicon N Channel IGBT

HighPowerSwitchingApplications The4thGeneration •FRDincludedbetweenemitterandcollector •Enhancement-mode •HighspeedIGBT:tf=0.25µs(typ.)(IC=60A) FRD:trr=0.8µs(typ.)(di/dt=−20A/µs) •Lowsaturationvoltage:VCE(sat)=2.3V(typ.)(IC=

GT60N321

IGBT

DESCRIPTION ·LowSaturationVoltage:VCE(sat)=2.3V@IC=10A ·HighCurrentCapability ·HighInputImpedance ·FastSwitching APPLICATIONS ·FrequencyConverters ·AirConditioning ·UPS,PFC ·MotorDrives

GT60N321

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

GT60N321

InsulatedGateBipolarTransistorSiliconNChannelIGBT

HighPowerSwitchingApplications The4thGeneration •FRDincludedbetweenemitterandcollector •Enhancement-mode •HighspeedIGBT:tf=0.25µs(typ.)(IC=60A) FRD:trr=0.8µs(typ.)(di/dt=−20A/µs) •Lowsaturationvoltage:VCE(sat)=2.3V(typ.)(IC=