Airfast RF Power GaN Transistor

This 27 dBm RF power GaN transistor is designed for cellular base station applications covering the frequency range of 2496 to 2690 MHz. Features • High terminal impedances for optimal broadband performance • Designed for low complexity linearization systems • Universal broadband driver •

文件：209.82 Kbytes 页数：13 Pages

恩XP

Airfast RF Power GaN Transistor

Features • High terminal impedances for optimal broadband performance • Designed for low complexity linearization systems • Universal broadband driver • Optimized for massive MIMO active antenna systems for 5G base stations

文件：209.78 Kbytes 页数：13 Pages

恩XP

贴片电容(MLCC)

KYOCERA AVX

Package：0603（1608 公制）；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：电容器 陶瓷电容器 描述：CAP CER 5.6PF 250V C0G/NP0 0603

American Technical Ceramics

Package：0603（1608 公制）；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：电容器 陶瓷电容器 描述：CAP CER 5.6PF 250V C0G/NP0 0603

American Technical Ceramics