丝印：5R1；SMD POWER INDUCTOR-RoHS

文件：177.97 Kbytes 页数：3 Pages

FENGJUI

峰瑞科技

丝印：5R199P；Package：PG-TO262；CoolMOS Power Transistor

Features • Lowest figure-of -merit RON x Qg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Pb-free lead plating; RoHS compliant • Quailfied according to JEDEC1) for target applications CoolMOS CP is designed for: • Hard & soft switching SMPS topologies

文件：280.67 Kbytes 页数：10 Pages

Infineon

英飞凌

丝印：5R140P；Package：PG-TO220；CoolMOSTM Power Transistor

Features • Worldwide best R DS ,on in TO220 • Lowest figure of merit RON x Qg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Pb-free lead plating; RoHS compliant • Quailfied according to JEDEC1) for target applications CoolMOS CP is designed for: • Hard &am

文件：282.07 Kbytes 页数：10 Pages

Infineon

英飞凌

丝印：5R199P；Package：PG-TO262；Coolmos Power Transistor

文件：541.95 Kbytes 页数：10 Pages

Infineon

英飞凌

CoolMOSTM Power Transistor

Features • Worldwide best R DS ,on in TO220 • Lowest figure of merit RON x Qg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Pb-free lead plating; RoHS compliant • Quailfied according to JEDEC1) for target applications CoolMOS CP is designed for: • Hard &am

文件：282.07 Kbytes 页数：10 Pages

Infineon

英飞凌

CoolMOS Power Transistor

Features • Lowest figure-of -merit RON x Qg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Pb-free lead plating; RoHS compliant • Quailfied according to JEDEC1) for target applications CoolMOS CP is designed for: • Hard & soft switching SMPS topologies

文件：280.67 Kbytes 页数：10 Pages

Infineon

英飞凌

High Current Inductor

文件：317.01 Kbytes 页数：3 Pages

COOPER

Power Chip짰 Thick Film on Alumina Substrate

文件：239.96 Kbytes 页数：2 Pages

OHMITEOHMITE MANUFACTURING COMPANY

欧敏欧敏电阻制造公司

N-Channel 150 V (D-S) MOSFET

文件：988.25 Kbytes 页数：9 Pages

VBSEMI

微碧半导体