4.5 Amps, 600 Volts N-CHANNEL MOSFET

DESCRIPTION The UTC 5N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching application

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UTC

友顺

4.5 Amps, 600/650 Volts N-CHANNEL MOSFET

文件：242.68 Kbytes 页数：6 Pages

UTC

友顺

5A, 600V N-CHANNEL POWER MOSFET

文件：254.02 Kbytes 页数：6 Pages

UTC

友顺

Avalanche Energy Specified

文件：157.21 Kbytes 页数：2 Pages

ISC

无锡固电

Power MOSFET

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VBSEMI

微碧半导体

N-CHANNEL MOSFET

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ZSELEC

淄博圣诺

N-CHANNEL POWER MOSFET

文件：2.03879 Mbytes 页数：8 Pages

SUNMATE

森美特

N-Channel Power MOSFET

文件：396.63 Kbytes 页数：8 Pages

NELLSEMI

尼尔半导体

5A, 600V N-CHANNEL POWER MOSFET

The UTC 5N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies • RDS(ON) = 2.2Ω @VGS = 10 V \n• Ultra Low Gate Charge ( Typical 15 nC )   \n• Low Reverse Transfer Capacitance ( CRSS = Typical 6.5 pF ) \n• Fast Switching Capability \n• Avalanche Energy Specified;

UTC

友顺

600V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and w

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FAIRCHILD

仙童半导体