| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
Marking：5N0；Package：ESV；200 mA CMOS Low Dropout Regulator with Fast Load Transient Response TheTCR2EFandTCR2EEseriesareCMOSsingleoutputvoltage regulatorswithanon/offcontrolinput,featuringlowdropoutvoltage,low outputnoisevoltageandfastloadtransientresponse. Thesevoltageregulatorsareavailableinfixedoutputvoltagesbetween1.0 Vand5.0Vandcapableof | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
Marking：5N0；Package：SMV；200 mA CMOS Low Dropout Regulator with Fast Load Transient Response TheTCR2EFandTCR2EEseriesareCMOSsingleoutputvoltage regulatorswithanon/offcontrolinput,featuringlowdropoutvoltage,low outputnoisevoltageandfastloadtransientresponse. Thesevoltageregulatorsareavailableinfixedoutputvoltagesbetween1.0 Vand5.0Vandcapableof | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
Marking：5N08031；Package：PG-TDSON-8；OptiMOS™-5 Power-Transistor Features •N-channel-Enhancementmode •AECQ101qualified •MSL1upto260°Cpeakreflow •175°Coperatingtemperature •Greenproduct(RoHScompliant) •100Avalanchetested | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
Marking：5N06L011；Package：PG-TDSON-8-53；OptiMOS™-5 Power-Transistor Features •OptiMOS™powerMOSFETforautomotiveapplications •N-channel–Enhancementmode–LogicLevel •ExtendedqualificationbeyondAEC-Q101 •Enhancedelectricaltesting •Robustdesign •MSL1upto260°Cpeakreflow •175°Coperatingtemperature •Greenproduct(RoHScompliant) • | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
Marking：5N06L015；Package：PG-TDSON-8-43；OptiMOS™-5 Power-Transistor Features •OptiMOS™powerMOSFETforautomotiveapplications •N-channel–Enhancementmode–LogicLevel •ExtendedqualificationbeyondAEC-Q101 •Enhancedelectricaltesting •Robustdesign •MSL1upto260°Cpeakreflow •175°Coperatingtemperature •Greenproduct(RoHScompliant) • | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
Marking：5N06L022；Package：PG-TDSON-8-34；OptiMOS™-5 Power-Transistor Features •OptiMOS™powerMOSFETforautomotiveapplications •N-channel–Enhancementmode–LogicLevel •ExtendedqualificationbeyondAEC-Q101 •Enhancedelectricaltesting •Robustdesign •MSL1upto260°Cpeakreflow •175°Coperatingtemperature •Greenproduct(RoHScompliant) • | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
Marking：5N06N011；Package：PG-TDSON-8-53；OptiMOS™-5 Power-Transistor Features •OptiMOS™powerMOSFETforautomotiveapplications •N-channel–Enhancementmode–NormalLevel •ExtendedqualificationbeyondAEC-Q101 •Enhancedelectricaltesting •Robustdesign •MSL1upto260°Cpeakreflow •175°Coperatingtemperature •Greenproduct(RoHScompliant) • | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
Marking：5N06N015；Package：PG-TDSON-8-43；OptiMOS™-5 Power-Transistor Features •OptiMOS™powerMOSFETforautomotiveapplications •N-channel–Enhancementmode–LogicLevel •ExtendedqualificationbeyondAEC-Q101 •Enhancedelectricaltesting •Robustdesign •MSL1upto260°Cpeakreflow •175°Coperatingtemperature •Greenproduct(RoHScompliant) • | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
Marking：5N06N022；Package：PG-TDSON-8-34；OptiMOS™-5 Power-Transistor Features •OptiMOS™powerMOSFETforautomotiveapplications •N-channel–Enhancementmode–NormalLevel •ExtendedqualificationbeyondAEC-Q101 •Enhancedelectricaltesting •Robustdesign •MSL1upto260°Cpeakreflow •175°Coperatingtemperature •Greenproduct(RoHScompliant) • | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
Marking：5N06N032；Package：PG-TDSON-8-34；OptiMOS™-5 Power-Transistor Features •OptiMOS™powerMOSFETforautomotiveapplications •N-channel–Enhancementmode–NormalLevel •ExtendedqualificationbeyondAEC-Q101 •Enhancedelectricaltesting •Robustdesign •MSL1upto260°Cpeakreflow •175°Coperatingtemperature •Greenproduct(RoHScompliant) • | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon |
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