丝印：5N0；Package：ESV；200 mA CMOS Low Dropout Regulator with Fast Load Transient Response

The TCR2EF and TCR2EE series are CMOS single output voltage regulators with an on/off control input, featuring low dropout voltage, low output noise voltage and fast load transient response. These voltage regulators are available in fixed output voltages between 1.0 V and 5.0 V and capable of

文件：1.52347 Mbytes 页数：17 Pages

TOSHIBA

东芝

丝印：5N0；Package：SMV；200 mA CMOS Low Dropout Regulator with Fast Load Transient Response

The TCR2EF and TCR2EE series are CMOS single output voltage regulators with an on/off control input, featuring low dropout voltage, low output noise voltage and fast load transient response. These voltage regulators are available in fixed output voltages between 1.0 V and 5.0 V and capable of

文件：1.52347 Mbytes 页数：17 Pages

TOSHIBA

东芝

丝印：5N08031；Package：PG-TDSON-8；OptiMOS™-5 Power-Transistor

Features • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • 100 Avalanche tested

文件：781.44 Kbytes 页数：10 Pages

Infineon

英飞凌

丝印：5N06L011；Package：PG-TDSON-8-53；OptiMOS™-5 Power-Transistor

Features • OptiMOS™ power MOSFET for automotive applications • N-channel – Enhancement mode – Logic Level • Extended qualification beyond AEC-Q101 • Enhanced electrical testing • Robust design • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) •

文件：826.11 Kbytes 页数：12 Pages

Infineon

英飞凌

丝印：5N06L015；Package：PG-TDSON-8-43；OptiMOS™-5 Power-Transistor

Features • OptiMOS™ power MOSFET for automotive applications • N-channel – Enhancement mode – Logic Level • Extended qualification beyond AEC-Q101 • Enhanced electrical testing • Robust design • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) •

文件：887.97 Kbytes 页数：12 Pages

Infineon

英飞凌

丝印：5N06L022；Package：PG-TDSON-8-34；OptiMOS™-5 Power-Transistor

Features • OptiMOS™ power MOSFET for automotive applications • N-channel – Enhancement mode – Logic Level • Extended qualification beyond AEC-Q101 • Enhanced electrical testing • Robust design • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) •

文件：889.25 Kbytes 页数：12 Pages

Infineon

英飞凌

丝印：5N06N011；Package：PG-TDSON-8-53；OptiMOS™-5 Power-Transistor

Features • OptiMOS™ power MOSFET for automotive applications • N-channel – Enhancement mode – Normal Level • Extended qualification beyond AEC-Q101 • Enhanced electrical testing • Robust design • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) •

文件：826.39 Kbytes 页数：12 Pages

Infineon

英飞凌

丝印：5N06N015；Package：PG-TDSON-8-43；OptiMOS™-5 Power-Transistor

Features • OptiMOS™ power MOSFET for automotive applications • N-channel – Enhancement mode – Logic Level • Extended qualification beyond AEC-Q101 • Enhanced electrical testing • Robust design • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) •

文件：1.32084 Mbytes 页数：12 Pages

Infineon

英飞凌

丝印：5N06N022；Package：PG-TDSON-8-34；OptiMOS™-5 Power-Transistor

Features • OptiMOS™ power MOSFET for automotive applications • N-channel – Enhancement mode – Normal Level • Extended qualification beyond AEC-Q101 • Enhanced electrical testing • Robust design • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) •

文件：923.41 Kbytes 页数：12 Pages

Infineon

英飞凌

丝印：5N06N032；Package：PG-TDSON-8-34；OptiMOS™-5 Power-Transistor

Features • OptiMOS™ power MOSFET for automotive applications • N-channel – Enhancement mode – Normal Level • Extended qualification beyond AEC-Q101 • Enhanced electrical testing • Robust design • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) •

文件：898.43 Kbytes 页数：12 Pages

Infineon

英飞凌