丝印：5H600L；Package：DFN5；MOSFET ??Power, Single N-Channel, DFN5/DFNW5 60 V, 1.3 m, 250 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

文件：196.51 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

丝印：5H600L；Package：DFN5；MOSFET ??Power, Single N-Channel, DFN5/DFNW5 60 V, 1.3 m, 250 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

文件：196.51 Kbytes 页数：8 Pages

ONSEMI

安森美半导体