GLZ5.6C

Marking：5C6；Package：MELF；500mW SURFACE MOUNT ZENER DIODE

PlanarDieConstruction 500mWPowerDissipation 2.0–56VNominalZenerVoltage IdeallySuitedforAutomatedAssembly ForUseinVoltageStabilizerorReference

NTMFS5C612NT1G

Marking：5C612N；Package：DFN5；MOSFET ??Power, Single, N-Channel 60 V, 1.6 m, 230 A

Features •SmallFootprint(5x6mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •TheseDevicesarePb−FreeandareRoHSCompliant

NVD5C446NT4G

Marking：5C446NG；Package：DPAK；MOSFET ??Power, Single N-Channel 40 V, 3.5 m, 101 A

Features •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHSCompliant

NVD5C454NT4G

Marking：5C454NG；Package：DPAK；MOSFET ??Power, Single N-Channel 40 V, 4.2 m, 83 A

Features •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHSCompliant

NVMFD5C446NLT1G

Marking：5C446L；Package：DFN8；MOSFET ??Power, Dual N-Channel 40 V, 2.65 m, 145 A

Features •SmallFootprint(5x6mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •NVMFD5C446NLWF−WettableFlankOptionforEnhancedOptical Inspection •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−Freean

NVMFD5C446NT1G

Marking：5C446N；Package：DFN8；Power MOSFET 40 V, 2.9 m, 127 A, Dual N?묬hannel

Features •SmallFootprint(5x6mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •NVMFD5C446NWF−WettableFlankOptionforEnhancedOptical Inspection •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−Freeand

NVMFD5C462NLT1G

Marking：5C462L；Package：DFN8；MOSFET ??Power, Dual N-Channel 40 V, 4.7 m, 84 A

Features •SmallFootprint(5x6mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •NVMFD5C462NLWF−WettableFlankOptionforEnhancedOptical Inspection •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−Freean

NVMFD5C462NT1G

Marking：5C462N；Package：DFN8；MOSFET ??Power, Dual N-Channel 40 V, 5.4 m, 70 A

Features •SmallFootprint(5x6mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •NVMFD5C462NWF−WettableFlankOptionforEnhancedOptical Inspection •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−Freeand

NVMFD5C466NLT1G

Marking：5C466L；Package：DFN8；MOSFET ??Power, Dual N-Channel 40 V, 7.4 m, 52 A

Features •SmallFootprint(5x6mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •NVMFD5C466NLWF−WettableFlankOptionforEnhancedOptical Inspection •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−Freean

NVMFD5C466NT1G

Marking：5C466N；Package：DFN8；MOSFET ??Power, Dual N-Channel 40 V, 8.1 m, 49 A

Features •SmallFootprint(5x6mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •NVMFD5C466NWF−WettableFlankOptionforEnhancedOptical Inspection •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−Freeand